Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition

Yamazaki, Yoichi; Katagiri, Masayuki; Sakuma, Naoko; Suzuki, Mariko; Sato, Shintaro; Nihei, Misato; Wada, Makoto; Matsunaga, N.; Sakai, Tadashi; Awano, Yuji

doi:10.1143/apex.3.055002

Cited by 63 publications

(62 citation statements)

References 25 publications

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“…This application requires the CNTs to be grown by chemical vapor deposition (CVD) in very high density vertically-aligned forests. [4][5][6][7][8][9][10][11] There has been great progress in growing such forests on insulating substrates such as Al 2 O 3 or SiO 2 (Refs. [12][13][14][15][16][17][18][19][20][21].…”

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confidence: 99%

In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

Bayer

Zhang

Blume

et al. 2011

Journal of Applied Physics

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The growth of high density vertically aligned carbon nanotube forests on conductive CoSi2 substrate layers is characterized by in situ x-ray photoemission spectroscopy and x-ray diffraction. We use in situ silicidation to transform as loaded, low conductivity CoSi supports to highly conductive CoSi2 during nanotube growth. These cobalt silicide films are found to be stable against oxidation and carbide formation during growth and act as an excellent metallic support for growth of aligned nanotubes, resembling the growth on the insulating Fe/Al2O3 benchmark system. The good catalytic activity is attributed to interfacial reactions of the Fe catalyst particles with the underlying CoSi2 support. We obtain ohmic conduction from the support layer to the carbon nanotube forest.

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confidence: 99%

In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

Bayer

Zhang

Blume

et al. 2011

Journal of Applied Physics

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“…The second approach is to pre-form the catalyst layer on substrates and then transform the layer into particles. Although extensive efforts have been made to form catalysts at high densities using plasma treatment [18][19][20], spaces inherently form between the catalyst particles ( Fig. 1b).…”

Section: Preparation Of Dense Catalyst Particles On a Conductive Undementioning

confidence: 99%

“…Awano and coworkers have pioneered work into CNT interconnects [15][16][17][18]. They developed a cluster deposition method [16] in which catalyst particles are formed by laser ablation, size selected, and then introduced into the bottom of the via holes as a cluster beam.…”

Section: Introductionmentioning

confidence: 99%

“…This approach can realize the growth of MWCNT arrays at a density of $3 · 10 11 cm À2 from the bottom of the via holes at the low temperature of 450°C [17]. Later, they developed a multi-step growth method [18], whereby in the first step, a H 2 or Ar plasma is applied to a Co catalyst layer on a conductive TiN/Ta barrier layer on Cu to induce Co particle formation at 25-260°C. A CH 4 /H 2 plasma is then applied to nucleate CNTs at 170-350°C, before finally a CH 4 /H 2 plasma is applied to grow CNTs at 450-600°C.…”

Section: Introductionmentioning

confidence: 99%

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Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Kim

et al. 2015

Carbon

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A B S T R A C TA simple process is presented that realizes carbon nanotube (CNT) arrays that meet the process and structure requirements for use in large-scale integrated circuits. Ni particles are formed densely on a conductive TiN layer on SiO 2 /Si substrates through nucleation and growth by sputtering, which was stopped prior to percolation of the Ni particles. Ni particles as dense as 2.8 · 10 12 cm À2 were formed after annealing at 400°C and chemical vapor deposition (CVD) was carried out at 400°C by feeding C 2 H 2 at partial pressures as low as 0.13-1.3 Pa so as not to kill the catalyst. Scanning electron microscopy with energy dispersive X-ray spectroscopy revealed the mass density of the arrays to be as high as 1.1 g cm À3 . High resolution transmission electron microscopy showed the densely packed CNTs with an average wall number of eight. Atomic force microscopy of the root of the CNT arrays transferred to a SiO 2 /Si substrate enabled direct counting of individual CNTs, revealing areal densities of CNTs and CNT walls as high as 1.5 · 10 12 and 1.2 · 10 13 cm À2 , respectively. The simple process, using conventional sputtering and CVD apparatus, with carefully engineered conditions offers a route for practical application of CNTs.

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“…[4][5][6][7][8] There are existing reports on the high-density growth of CNT films. [9][10][11][12] We previously discovered a dense, vertical and horizontal graphene (DVHG) structure, in which vertically oriented graphene layers are formed densely below horizontally oriented graphene layers, perpendicular to the substrate [ Fig. 1(a)].…”

Section: Introductionmentioning

confidence: 99%

Long Length, High-Density Carbon Nanotube Film Grown by Slope Control of Temperature Profile for Applications in Heat Dissipation

Kawabata

Murakami

Nihei

et al. 2013

Jpn. J. Appl. Phys.

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We have developed a new growth method for a film of dense, vertically aligned carbon nanotubes (CNTs). We varied the slope of the growth temperature profile between 450 and 800 °C. By using the method with an Fe/Ti catalyst, the filling factor of the CNT film was measured to be 0.28, which is 20 times denser than that in the case where conventional CVD growth is utilized. We name this growth method the slope control of temperature profile (STEP) growth. Another feature of CNT films obtained by STEP growth is their mirror like surfaces. This allows for the measurement of the thermal conductivity by a pulse optical heating thermoreflectance method. The maximum thermal conductivity of the STEP-grown CNT film was 260 W m-1 K-1, which is higher than those of a solder and Si. This result suggests that STEP-grown CNT films are effective heat dissipation materials and can be used as thermal interface material (TIM) and thermal through silicon via (TSV).

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Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition

Cited by 63 publications

References 25 publications

In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Long Length, High-Density Carbon Nanotube Film Grown by Slope Control of Temperature Profile for Applications in Heat Dissipation

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