2013
DOI: 10.1016/j.jallcom.2013.03.244
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Synthesis of SnO2 functionalized amorphous carbon nanotube for efficient electron field emission application

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Cited by 21 publications
(4 citation statements)
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“…Keeping this in mind, present work reports the development of SiO 2 -a-CNT hybrids and studies the system as remover of Rh-B. It has been seen that though when a-CNTs are added in to SiO 2 matrix the dominating removal mechanism changes from adsorption to photo-catalysis while as per previous report a-CNTs are very good absorber of dyes [31]. Thus overall it is a synergetic effect of adsorption and catalysis for the removal of the dye.…”
Section: Introductionmentioning
confidence: 63%
See 1 more Smart Citation
“…Keeping this in mind, present work reports the development of SiO 2 -a-CNT hybrids and studies the system as remover of Rh-B. It has been seen that though when a-CNTs are added in to SiO 2 matrix the dominating removal mechanism changes from adsorption to photo-catalysis while as per previous report a-CNTs are very good absorber of dyes [31]. Thus overall it is a synergetic effect of adsorption and catalysis for the removal of the dye.…”
Section: Introductionmentioning
confidence: 63%
“…As reported in previous work [31], certain amount of ferrocene (C 5 H 5 ) 2 Fe and ammonium chloride (NH 4 Cl) were mixed in ratio 1:2. The mixture was placed in mortar to grind well and then it was kept in an oven in a glass beaker for 30 minutes at 225 0 C. To remove the impurity, the mixture was washed thoroughly with deionized water and diluted HCl.…”
Section: A-cnts Synthesismentioning
confidence: 97%
“…When decorated with SnO 2 , controllably damaged by argon ions on the sidewall, or combined with RGO on carbon cloth/polyethylene terephthalate substrates, aCNTbased nanostructures have good field-emission characteristics [66,83,135]. Furthermore, the amorphous structure of aCNTs makes them a better simulant of kerogen than graphitic CNTs [136].…”
Section: Other Applicationsmentioning
confidence: 99%
“…Tin dioxide is a band gap of about 3.6eV n-type semiconductor material, has good thermal stability, optical properties and gas sensitivity [1][2][3][4]. Widely used in protective coatings, precision resistors, display devices, solar cells [5][6][7].…”
Section: Introductionmentioning
confidence: 99%