Synthesizing Germanium Nanotubes in an Electric Arc Plasma

Тимеркаев, Б. А.; Kaleeva, A. A.; Timerkaeva, Dilyara; Saifutdinov, A. I.

doi:10.1134/s0036024420020326

Cited by 23 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, promising results have recently been achieved for the growth 1D Ge nanostructures without the involvement of any foreign metal catalysts. Catalyst-free Ge structures with a mean diameter in the order of 1 μm and lengths from 100 μm to 1 mm was achieved via arc-discharge CVD [ 160 ]. Even though some tapering of the nanowires was detected, the nanowires presented a smooth surface with the presence of small Ge nanocrystal spheres at their ends.…”

Section: Self-seeded Germanium Nanowire Synthesis Methodsmentioning

confidence: 99%

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

View full text Add to dashboard Cite

Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

show abstract

Section: Self-seeded Germanium Nanowire Synthesis Methodsmentioning

confidence: 99%

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

View full text Add to dashboard Cite

show abstract

“…Interest in Ge NWs is primarily due to the small band gap of crystalline Ge (c-Ge), the high mobility of charge carriers, and the low effective mass of an electron. Such properties of c-Ge are also retained in Ge NWs [2]. It was demonstrated that germanium nanostructures can be used in lithium-and sodium-ion batteries [3][4][5][6][7][8][9], thermoelectric converters [10][11][12], and photodetectors [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Effect of Silicate Additive on Structural and Electrical Properties of Germanium Nanowires Formed by Electrochemical Reduction from Aqueous Solutions

et al. 2022

View full text Add to dashboard Cite

Layers of germanium (Ge) nanowires (NWs) on titanium foils were grown by metal-assisted electrochemical reduction of germanium oxide in aqueous electrolytes based on germanium oxide without and with addition of sodium silicate. Structural properties and composition of Ge NWs were studied by means of the scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. When sodium silicate was added to the electrolyte, Ge NWs consisted of 1–2 at.% of silicon (Si) and exhibited smaller mean diameter and improved crystallinity. Additionally, samples of Ge NW films were prepared by ultrasonic removal of Ge NWs from titanium foils followed with redeposition on corundum substrates with platinum electrodes. The electrical conductivity of Ge NW films was studied at different temperatures from 25 to 300 °C and an effect of the silicon impurity on the thermally activated electrical conductivity was revealed. Furthermore, the electrical conductivity of Ge NW films on corundum substrates exhibited a strong sensor response on the presence of saturated vapors of different liquids (water, acetone, ethanol, and isopropanol) in air and the response was dependent on the presence of Si impurities in the nanowires. The results obtained indicate the possibility of controlling the structure and electrical properties of Ge NWs by introducing silicate additives during their formation, which is of interest for applications in printed electronics and molecular sensorics.

show abstract

Ab initio prediction of metallic nature of sp3-hybridized germanium structures

Merinov,

Khrushkova

2024

Computational and Theoretical Chemistry

View full text Add to dashboard Cite

Synthesizing Germanium Nanotubes in an Electric Arc Plasma

Cited by 23 publications

References 18 publications

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Effect of Silicate Additive on Structural and Electrical Properties of Germanium Nanowires Formed by Electrochemical Reduction from Aqueous Solutions

Ab initio prediction of metallic nature of sp3-hybridized germanium structures

Contact Info

Product

Resources

About