Systems and Technology for Production-Scale Molecular Beam Epitaxy

Osteen, Mark; Readinger, Eric D.; Farrell, Stephen; Marek, Matthew; Doran, Molly; Hanser, Drew

doi:10.1016/b978-0-12-812136-8.00031-1

Cited by 5 publications

(5 citation statements)

References 41 publications

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“…The best quality of QDs, either on native III-V substrate or Si substrate, is still obtained from molecular beam epitaxy (MBE) growth by far. While MBE is typically considered a slower and higher-cost epitaxy process than metal organic chemical vapor deposition (MOCVD), it is relatively straightforward to scale it up from a technology perspective [52]. 300 mm system is already available from vendors like Veeco and Riber with 450 mm one on the horizon waiting for the readiness of fabrication (i.e., substrate and chip manufacturing) and volume market demand.…”

Section: Microring Laser Designmentioning

confidence: 99%

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Liang

Roshan-Zamir

Fan

et al. 2020

J. Lightwave Technol.

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Optical connectivity, which has been widely deployed in today's datacenters and high-performance computing (HPC) systems, is a disruptive technological revolution to the IT industry in the new Millennium. In our journey to debut an Exascale supercomputer, a completely new computing concept, called memorydriven computing, was innovated recently. This new computing architecture brings challenges and opportunities for novel optical interconnect solutions. Here, we first discuss our strategy to develop appropriate optical link solutions for different data traffic scenarios in memory-driven HPCs. Then, we present detailed review on recent work to demonstrate fully photonics-electronicsintegrated single-and multi-wavelength directly modulated laser (DML) transmitters on silicon for the first time. Compact heterogeneous microring lasers and laser arrays were fabricated as photonic engines to work with a customized complementary metal-oxide semiconductor (CMOS) driver circuit. Microring lasers based on conventional quantum well and new quantum dot lasing medium were compared in the experiment. Thermal shunt and MOS capacitor structures were integrated into the lasers for effective thermal management and ultra low-energy tuning. It enables a

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Section: Microring Laser Designmentioning

confidence: 99%

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Liang

Roshan-Zamir

Fan

et al. 2020

J. Lightwave Technol.

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show abstract

“…As a result, real-time use of RHEED data is often limited to readily available data, such as deep analysis conducted a posteriori on recorded RHEED frames . Traditional methods of analyzing RHEED frames using the human eye are time-consuming, labor-intensive, and error-prone . Therefore, researchers have begun to employ artificial intelligence (AI) for RHEED interpretation, high-accuracy analysis, and quality prediction in MBE.…”

Section: Introductionmentioning

confidence: 99%

“…6 Traditional methods of analyzing RHEED frames using the human eye are time-consuming, labor-intensive, and error-prone. 4 Therefore, researchers have begun to employ artificial intelligence (AI) for RHEED interpretation, highaccuracy analysis, and quality prediction in MBE.…”

Section: Introductionmentioning

confidence: 99%

“…1−3 Despite its usefulness, however, only about half of large-scale MBE systems are equipped with RHEED. 4 RHEED patterns can be used to predict quality, determine growth rate, and control thin film growth by measuring the substrate surface's shine and beam intensity before and during the growth process. 5 Additionally, sensing data obtained from various sensors attached to the MBE system are also used to generate information during the production of semiconductor materials like gallium nitride (GaN).…”

Section: Introductionmentioning

confidence: 99%

“…Molecular beam epitaxy (MBE) is a widely used method for depositing thin-film single crystals, particularly in the fabrication of semiconductor devices like high-performance transistors and high-electron-mobility transistors (HEMTs) for radio frequency applications . Reflection high-energy electron diffraction (RHEED) is an important control technique used in MBE, providing accurate monitoring of crystal growth. − Despite its usefulness, however, only about half of large-scale MBE systems are equipped with RHEED . RHEED patterns can be used to predict quality, determine growth rate, and control thin film growth by measuring the substrate surface’s shine and beam intensity before and during the growth process .…”

Section: Introductionmentioning

confidence: 99%

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Rotation Error Detection of Gallium Nitride (GaN) Substrate in MBE Utilizing Ensemble Learning

Anjum¹,

Lee²,

Noh³

2023

Crystal Growth & Design

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A rotating substrate is essential for achieving highquality and uniform growth of gallium nitride (GaN) thin films in molecular beam epitaxy (MBE). By rotating the substrate during growth, the deposited material can be distributed more uniformly across the surface, resulting in a more uniform and defect-free film. However, the substrate may stop rotating during fabrication, and it is a challenge for engineers to detect the rotation of the substrate using information from reflection high-energy electron diffraction (RHEED). The current method for analyzing rotation using RHEED data is manual, time-consuming, and error-prone. Therefore, this research proposes an automated machine learning-based rotation error detection (RED) model to determine wafer rotation and then alert the engineers in case of an anomaly. The proposed approach consists of (1) ensemble learning models such as random forest classifier and extreme gradient boosting (XGBoost) for rotation error detection, (2) prepared novel intensity data from RHEED videos, (3) comparison to select the best ensemble learning model at a small scale, ( 4) training XGBoost at a large scale, (5) deployment in production using MLflow, (6) development of a REST application programming interface (API) for inference, and (7) integrated KakaoTalk API to generate and send a detailed alert message to engineers so that they can take appropriate actions in time. The experimental results achieved F1 scores for normal and rotational errors of 98.9 and 83.1%, respectively. The proposed method can make a valuable contribution to epitaxial wafer growth by enhancing production efficiency, improving product quality, and reducing costs.

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Bayesian optimization with experimental failure for high-throughput materials growth

et al. 2022

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A crucial problem in achieving innovative high-throughput materials growth with machine learning, such as Bayesian optimization (BO), and automation techniques has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a BO algorithm that complements the missing data in optimizing materials growth parameters. The proposed method provides a flexible optimization algorithm that searches a wide multi-dimensional parameter space. We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth, namely machine-learning-assisted molecular beam epitaxy (ML-MBE) of SrRuO3, which is widely used as a metallic electrode in oxide electronics. Through the exploitation and exploration in a wide three-dimensional parameter space, while complementing the missing data, we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1, the highest among tensile-strained SrRuO3 films ever reported, in only 35 MBE growth runs.

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Systems and Technology for Production-Scale Molecular Beam Epitaxy

Cited by 5 publications

References 41 publications

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Rotation Error Detection of Gallium Nitride (GaN) Substrate in MBE Utilizing Ensemble Learning

Bayesian optimization with experimental failure for high-throughput materials growth

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