Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates

Abstract

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metalloorganic decomposition technology

Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

“…Fig. 1 The main crystal structures of HfO 2 discovered by USPEX (Kresse & Furthmüller, 1996) b (Quintard et al, 2002) c (Blöchl, 1994) (Zhao & Vanderbilt, 2002) b (Kukli et al, 1996) c (Jiang et al, 2010) d (Bersch et al, 2008) Similar trends are found for SiO 2 ; the most interesting structures discovered by USPEX are shown in Fig. 2.…”

Progress and future directions for atomic layer deposition and ALD-based chemistry

“…13 The term "ALD" began to be used commonly starting around 2000 when this deposition method emerged in semiconductor microelectronics, and ALD appeared as an important technique in the semiconductor roadmap. The key systems under development at this time were high-κ dielectrics for gate oxides in metal oxide semiconductor fi eld-effect transistors 6 and nanolaminate dielectric layers, 14 for example, for low electron leakage dynamic random-access memory devices. 15 , 16 Prior to this time, the term "atomic layer epitaxy" or ALE was in common use.…”

Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

“…by composite films. So far the systems Ta20,-A1203, Ta205-Hf02 and Ta205-Zr02 have been studied and they show how the ALE method enables, besides decreasing the leakage current, also tailoring of dielectric constant and refractive index with the aid of multilayer structures [71,76,77].…”