Tailoring the nonlinear optical susceptibility χ(3), photoluminescence and optical band gap of nanostructured SnO2 thin films by Zn doping for photonic device applications

Bannur, M.S.; Antony, Albin; Maddani, K.I.; Poornesh, P.; Rao, Ashok; Choudhari, K.S.

doi:10.1016/j.physe.2018.06.025

Cited by 28 publications

(8 citation statements)

References 36 publications

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“…With an increase in Zn doping content, there is a noticeable trend of broadening in the film and an accompanying increase in intensity. This could be ascribed to the existence of micro strain, defects within the crystal structure, and an uneven composition in the films [15].…”

Section: Structural Analysismentioning

confidence: 99%

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Thundiyil,

Anusha,

et al. 2024

Mater. Res. Express

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In this study, we focused on the impact of nonlinear optical properties on Zn-doped NiO thin film, which was analyzed using z scan and THG technique. The z-scan technique was performed using a continuous wave laser. The open aperture shows that all films exhibit the reverse saturable absorption and the mechanism responsible for two-photon absorption, excited state absorption, and free carrier absorption. The closed aperture results in the negative nonlinear refraction caused by the thermal effects. The enhancement in the third-order susceptibility from 5.37 ×10-3 to 13.24 ×10-3 esu with Zn doping is due to the presence and increase in the concentration of defect levels in the films. The THG studies were performed using femtosecond and nanosecond lasers and revealed that the enhancement in the signal with the rise in Zn doping concentration was attributed to the enhancement of photoexcitation and relaxation processes within the sample. These results suggest that Zn-doped NiO films have significant potential for applications in the realm of optoelectronic applications.

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Section: Structural Analysismentioning

confidence: 99%

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Thundiyil,

Anusha,

et al. 2024

Mater. Res. Express

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“…For many photonic applications, the material's linear optical susceptibility

χ^{((), 1)}

, third nonlinear optical susceptibility

χ^{((), 3)}

and nonlinear refractive index

n_{((), 2)}

are critical factors. The following relation can be used to compute it as 42–45 :

χ^{((), 1)} = \frac{n^{2} - 1}{4 π},

χ^{((), 3)} = B {((), \frac{n^{2} - 1}{4 π})}^{4},

where,

n

is the average index of refraction of the sample,

B = 1.7 \times 10^{- 10} esu

is a constant factor. The nonlinear index of refraction

n_{((), 2)}

of the prepared solid electrolyte films was determined using the following relation 46 :

n_{((), 2)} = \frac{12 {italicπχ}^{((), 3)}}{n},

…”

Section: Optical Analysis Studies Of G‐c3n4/pmma Nanocomposite Filmsmentioning

confidence: 99%

“…For many photonic applications, the material's linear optical susceptibility χ 1 ð Þ , third nonlinear optical susceptibility χ 3 ð Þ and nonlinear refractive index n 2 ð Þ are critical factors. The following relation can be used to compute it as [42][43][44][45] :…”

Section: Nonlinear Optical Properties Of G-c 3 N 4 /Pmma Polymeric Na...mentioning

confidence: 99%

Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Mohammed

Yahia

Farid

2022

J of Applied Polymer Sci

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Solution casting was used to synthesis polymethyl methacrylate (PMMA) nanocomposites with graphitic carbon nitride (g‐C3N4) nanoparticles in various percentages (0.033, 0.166, 0.33, 1.665, and 3.3 wt%). XRD patterns confirmed the amorphous nature of PMMA/C3N4 nanocomposites. Optical constants are obtained at room temperature in the 200–2500 nm wavelength range. The optical band gaps of PMMA/C3N4 doped films, both direct and indirect, are measured and have values change from 4.8 to 2.32 eV for Enormalgind and changes from 5 to 3.7 eV for Enormalgnormald. The refractive index values of the materials were also calculated using Moss, Reddy, Anani, and Kumar‐Singh relationships with average values vary from (2.109 to 2.529) and vary from 2.155 to 2.32 for indirect and direct transition, respectively. The dielectric constant, dielectric loss, and AC electrical conductivity at RT and the g‐C3N4 doping level was examined as frequency variables from 100 to 1 MHz. In consideration of Jonscher's universal power law, the variation of σAC with frequency was examined. The addition of C3N4 appears to raise the σAC of the studied films, making them attractive for semiconductor applications. According to the optical limiting results, the samples doped with g‐C3N4 are severely attenuated for the laser beam of 638.2 nm. PMMA doped with g‐C3N4 is a viable contender for electronic and optoelectronic applications, particularly laser power reduction.

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“…For 5% Na: ZnO thin film saturable absorption mechanism (S.A) was perceived which corresponds to negative absorption nonlinearity. The switching over mechanism from RSA to SA is due to the fact that absorption in the excited state is higher with respect to the ground state and further non-availability of empty defect states [19,22]. Since the excitation source used in the experiment were a continuous mode operated laser source the nonlinear absorption process exhibited by Na: ZnO can be attributed to a thermal nonlinear effect.…”

Section: Open Aperture Z-scan Measurementsmentioning

confidence: 99%

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

Deekshitha

Upadhya

Antony

et al. 2019

Materials Science in Semiconductor Processing

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Tailoring the nonlinear optical susceptibility χ(3), photoluminescence and optical band gap of nanostructured SnO2 thin films by Zn doping for photonic device applications

Cited by 28 publications

References 36 publications

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

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Tailoring the nonlinear optical susceptibility χ(3), photoluminescence and optical band gap of nanostructured SnO2 thin films by Zn doping for photonic device applications

Cited by 28 publications

References 36 publications

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Third-harmonic optical process in Zn:NiO thin films under the influence of femtosecond and continuous wave laser excitation

Synthesis and characterization g‐C3N4‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures

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Synthesis and characterization g‐C₃N₄‐doped PMMA polymeric nanocomposites films for electronic and optoelectronic applications