Tailoring the robust superhydrophobic silicon textures with stable photodetection properties

Hsiao, Min; Chen, Kai Yu; Chen, Chia Yun

doi:10.1038/s41598-018-37853-4

Cited by 10 publications

(2 citation statements)

References 28 publications

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“…4. It has been reported that the measured contact angle was correlated with the roughness of nanostructures according to the equation shown below [24,25],…”

Section: Resultsmentioning

confidence: 99%

High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

2020

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Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity. Herein, in this study, the bias-modulated MaCE process was performed, showing the etching rates more than four times of magnitude than that of typical bias-free MaCE with large-area uniformity. It was found that the field-mediated hole rectification overwhelmed the effect of retarded diffusivity from reactive ions, and thus the dynamics of distributed etching were therefore transferred to the directional etching behaviors. In addition, the etching orientation could be also manipulated with the external bias. The results demonstrated that the etching direction was switched toward the slanted features by varying the electric polarization, creating the special slanted/vertical NW arrays, which possessed the superior antireflection characteristics than the conventional vertically aligned features.

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“…4. It has been reported that the measured contact angle was correlated with the roughness of nanostructures according to the equation shown below [24,25],…”

Section: Resultsmentioning

confidence: 99%

High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

2020

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“…On the other hand, the use of this Cassie model modified in accordance with the surface geometry can be effective in the study of non-stochastic structures obtained by laser processing [28], anisotropic chemical etching of the silicon surface [29], etc.…”

Section: Determining the Distribution Of The Liquid Contact Surfacementioning

confidence: 99%

Wetting Patterns of Liquid-Repellent Femtosecond Laser Textured Aluminum Surfaces

et al. 2022

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Although liquid-repellent surfaces are in demand in many applications, their use is limited by the Cassie state’s sustainability to environmental factors, such as the repellency of liquids with a surface tension lower than that of water. This phenomenon remains not fully understood, despite a well-developed theory. In the current work, wetting of femtosecond laser-textured aluminum surfaces for probe liquids with a surface tension of 72.8–21.2 mN/m was considered. The resulting patterns were an array of pillars at the micro level and fractal-like structures at the nano level. These structured surfaces were treated with alkoxysilanes and oleic acid. All textured samples exhibited a Cassie state with water, and contact angles greater than 150° were achieved with silane-treated surfaces. A decrease in the surface tension of the probe liquid led to а transition to the Wetzel state at 44–46 mN/m for alkoxysilanes and at 52 mN/m for oleic acid. A typical shape of the textured surface wetting curve is proposed. It was shown that the determined values of the surface tension of the Cassie-Wenzel transition were 10–15 mN/m lower than those predicted by the Cassie equations.

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Effects of the doping level in the production of silicon nanowalls by metal assisted chemical etching

Aca-López

Quiroga‐González

Gómez-Barojas

et al. 2020

Materials Science in Semiconductor Processing

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Si nanowalls have been prepared out of Si substrates in a wide range of resistivities, by Metal Assisted Chemical Etching (MACE). Si (100) boron doped wafers with three resistivities 15-25 Ω·cm, 0.01-0.02 Ω·cm and 0.0005-0.0007 Ω·cm were used in this work. MACE was carried out in two steps: first, silver particles were deposited; and second, the etching solutions were optimized by varying the HF and H2O2 concentrations. This is the first time that nanowalls are obtained out of substrates of resistivity smaller than 0.001 Ω·cm. The relation of sizes and characteristics of the walls with the doping level of the Si substrates has been emphasized.

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Tailoring the robust superhydrophobic silicon textures with stable photodetection properties

Cited by 10 publications

References 28 publications

High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

Wetting Patterns of Liquid-Repellent Femtosecond Laser Textured Aluminum Surfaces

Effects of the doping level in the production of silicon nanowalls by metal assisted chemical etching

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