Tandem Solar Cell Concept Using Black Silicon for Enhanced Infrared Absorption

Guenther, Kay-Michael; Baumann, Anna Lena; Gimpel, Thomas; Kontermann, Stefan; Schade, Wolfgang

doi:10.1016/j.egypro.2012.07.109

Cited by 13 publications

(6 citation statements)

References 7 publications

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“…In particular, it can be distributed in remote areas, mountains, deserts, islands, and rural areas to save on costly transmission lines. In recent years, black silicon has become one of the materials used to make solar cells [ 72 , 97 , 98 , 99 , 100 , 101 ]. The research hotspot is to change the surface structure of black silicon [ 102 ] and passivate black silicon [ 103 ].…”

Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

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Section: Applicationsmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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“…While tandem photovoltaic devices represent an essential block in overcoming singlejunction (homo-junction) limitations, PSC-Si tandem economic feasibility is well studied [75]. Recently, Zhengshan J. et al [38] performed a detailed balance techno-economic study on tandem solar cells.…”

Section: Implementations and Challenges Of Pscmentioning

confidence: 99%

Recent Issues and Configuration Factors in Perovskite-Silicon Tandem Solar Cells towards Large Scaling Production

et al. 2021

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The unprecedented development of perovskite-silicon (PSC-Si) tandem solar cells in the last five years has been hindered by several challenges towards industrialization, which require further research. The combination of the low cost of perovskite and legacy silicon solar cells serve as primary drivers for PSC-Si tandem solar cell improvement. For the perovskite top-cell, the utmost concern reported in the literature is perovskite instability. Hence, proposed physical loss mechanisms for intrinsic and extrinsic instability as triggering mechanisms for hysteresis, ion segregation, and trap states, along with the latest proposed mitigation strategies in terms of stability engineering, are discussed. The silicon bottom cell, being a mature technology, is currently facing bottleneck challenges to achieve power conversion efficiencies (PCE) greater than 26.7%, which requires more understanding in the context of light management and passivation technologies. Finally, for large-scale industrialization of the PSC-Si tandem solar cell, the promising silicon wafer thinning, and large-scale film deposition technologies could cause a shift and align with a more affordable and flexible roll-to-roll PSC-Si technology. Therefore, this review aims to provide deliberate guidance on critical fundamental issues and configuration factors in current PSC-Si tandem technologies towards large-scale industrialization. to meet the 2031 PSC-Si Tandem road maps market target.

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“…These methods have already been utilized to reduce the reflectance in solar cells and photodiodes. [11,12,[18][19][20] Evidently, b-Si could also be employed in image sensors to significantly improve the QE and broaden their photosensitive spectrum. Furthermore, there are indications that b-Si can also increase the optical path length in silicon by scattering the light, which could in turn enhance absorption and consequently improve the QE at NIR wavelengths.…”

Section: Introductionmentioning

confidence: 99%

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Setälä

Prest

Stefanov

et al. 2023

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Even though the recent progress made in complementary metal–oxide–semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion‐implanted back‐surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300–700 nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

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Tandem Solar Cell Concept Using Black Silicon for Enhanced Infrared Absorption

Cited by 13 publications

References 7 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Issues and Configuration Factors in Perovskite-Silicon Tandem Solar Cells towards Large Scaling Production

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

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