Technology for PNP Planar Silicon Transistors: Switching and Amplifying

LaRocque, Armond P.; Yatsko, Robert S.; Rogel, Alex; Jackson, R.; Rible, Vincent E.

doi:10.21236/ad0408190

Cited by 1 publication

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, although the thickness obtained by the new process is proportionate to source concentration, this may be because the (Sb) 2 term of Eq. [2] is close to constant in the p,rese~ce of A1203 in the glass layer on the diffusion wafer (9).…”

mentioning

confidence: 71%

“…However, when these concentrations increase more, two problems result. One is surface defects, such as surface erosion (2). The other is contamination by the assisting A120~ impurity.…”

Section: Discussionmentioning

confidence: 99%

“…However, two problems remain in conventional Sb-diffusion processes. One is diffusion-induced defects such as erosions (2,3), which hinder normal epitaxial growth and decrease device yield. The other is difficulty in obtaining high carrier concentrations at the surface of the diffuse:d layer (4).…”

mentioning

confidence: 99%

See 2 more Smart Citations

High Concentration Sb Diffusion into Silicon Using Auxiliary Wafers and Optimum Conditions

Nanba

Kozuka

Nakamura

1984

J. Electrochem. Soc.

View full text Add to dashboard Cite

The optimum condition for Sb diffusion into silicon using a silicon wafer lapped with AleO~ powder and a sapphire wafer as an auxiliary wafer has been determined. To obtain higher Sb concentrations-as high as the solid solubility Of Sb into sillcon-the SbzO3 vaporized source concentration has to be kept over 0.4 tool percent (m/o) during diffusion. A nonoxidizing atmosphere and a small distance between the diffusion and auxiliary wafers are desirable. Although sheet conductance obtained by utilizing a lapped silicon wafer depends on the number of uses it has, that obtaind by the sapphire wafer is independent of use number. When A1~O3 is present on the diffusion wafer beforehand, the diffusion concentration increase is similar to that with the auxiliary wafers with AlsO3 on their surface. The process presented here has no effect on phosphorus impurity diffusion. The solubility change of elemental Sb in the multicomponent glass film grown on the diffusion wafer is presented to explain the higher Sb concentration when A1~O3 is present.

show abstract

mentioning

confidence: 71%

“…However, when these concentrations increase more, two problems result. One is surface defects, such as surface erosion (2). The other is contamination by the assisting A120~ impurity.…”

Section: Discussionmentioning

confidence: 99%