TEM damage studies and electrical profile measurements of Si+ implanted GaAs

Stewart, C. P.; Blunt, R.T.; Booker, G. R.; Sanders, I. R.

doi:10.1016/0378-4363(83)90319-4

Cited by 6 publications

(6 citation statements)

References 4 publications

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“…Similar observations have high precision [7,34]. In this study the depletion of been reported in studies of heavily Si-doped the gallium containing gaseous species from the Bridgman-grown GaAs [32] and annealed Si-im-gas phase is demonstrated by the exponential deplanted GaAs [33]. The dislocation loop densities crease in growth rate as given in fig.…”

Section: For Carrier Concentrations Higher Than 3 X 1018supporting

confidence: 81%

Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Tang

Lochs

Hageman

et al. 1989

Journal of Crystal Growth

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Section: For Carrier Concentrations Higher Than 3 X 1018supporting

confidence: 81%

Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Tang

Lochs

Hageman

et al. 1989

Journal of Crystal Growth

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“…Extended defects were found to form for annealing at a critical temperature between 450 and 500 C. The majority of defects are circular prismatic interstitial dislocation loops on the {110} planes, with Burgers vectors a=2h110i: Similar defects have been reported for GaAs implanted with light (H) [22], intermediate (Si) [23] and heavy (Se) [24] ions and also electron irradiated GaAs [25,26]. It is thus clear that these defects arise from the implantation damage and not from the implanted ions themselves.…”

Section: Origin Formation and Nature Of Dislocation Loopsmentioning

confidence: 54%

Transmission Electron Microscopy of Be Implanted Si-Doped GaAs

Kroon

Neethling

Zolper

2000

phys. stat. sol. (a)

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Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm À2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loops on the {110} planes, originating after the annealing of defect clusters near 400 C. The Burgers vector of these loops was computed using the comparison of experimental and computed defect intensity profiles. The formation of only interstitial loops is attributed to the dislocation bias effect, whereby interstitials are attracted more strongly to dislocations than vacancies. A high density of small loops with {110} and {111} habit planes were observed to form slightly shallower than the projected range after annealing at 600 C and extend closer to the surface after annealing at 700 C. The density of these loops decreased, and their size increased, after annealing at 800 C. However, they remained small compared to the loops near the projected range. A shift of the loop area per unit volume profile slightly deeper into the material after annealing at 600 C or higher (as compared to annealing at 500 C) resulted from the formation of loops as interstitials diffused deeper into the material, while interstitials diffusing to shallower regions were annihilated by the excess vacancy concentration in this region developed due to knock-on during implantation. The decreased size of the loops found in this study as compared to those reported previously is suggested to be as a result of the use of degenerately Si-doped rather than semi-insulating GaAs.

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“…4 were implanted with 1 • 10 ~3 cm -2 of Si 28 at 100 keV. In this figure, all the data points were obtained from the experimental results of this present study and previous literature (12,20,23,(26)(27)(28)(29)(30).…”

Section: ] Ffrpmentioning

confidence: 76%

A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC‐Grown GaAs

Bindal

Wang

Chang

et al. 1989

J. Electrochem. Soc.

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The activation efficiency of implanted Si in LEC grown normalGaAs has been investigated experimentally. Atomic and carrier distributions of the implant have been obtained using SIMS, conventional, and step‐etch C‐V techniques, respectively. Based on these experimental observations, Si activation efficiency is found to be a strong function of the implantation fluence and annealing temperature, and a weak function of the implantation energy and annealing time. An activation efficiency model is also constructed as the result of these experimental evaluations. For simplicity the model ignores all the weak processing parameters in the computation of activation efficiency. A model reproducing the atomic concentration profile for a given implant has also been developed to use in the activation efficiency model.

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TEM damage studies and electrical profile measurements of Si+ implanted GaAs

Cited by 6 publications

References 4 publications

Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Si-doping of MOCVD GaAs: Closer analysis of the incorporation process

Transmission Electron Microscopy of Be Implanted Si-Doped GaAs

A Process Simulation Model for Silicon Ion Implantation in Undoped, LEC‐Grown GaAs

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