Temperature and high fluence induced ripple rotation on Si(100) surface

Abstract

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20 • C to 450 • C and at each temperature, the ion fluence is systematically varied in a wide range from ∼ 1×10 18 cm −2 to 1×10 20 cm −2 . The ion sputtered surface morphologies are characterized by atomic force microscopy and high-resolution cross-sectional transmission electron microscopy. At room temperature, the ion sputtered surfaces show periodic ripple nanopatterns and their wave-vector remains parallel to ion beam projection for entire fluence range. With increase of substrate temperature, these patterns tend to demolish and reduce into randomly ordered mound-like structures around 350 • C. Further rise in temperature above 400 • C leads, surprisingly, orthogonally rotated ripples beyond fluence 5×10 19 cm −2 . All the results are discussed combining the theoretical framework of linear, non-linear and recently developed mass redistribution continuum models of pattern formation by IBS. These results have technological importance regarding the control over ion induced pattern formation as well as it provides useful information for further progress in theoretical field.

Ar+-sputtered Ge (001) surface nanostructuring at target temperature above the recrystallization threshold

“…It is advantageous for its ability of nanostructuring in large area (order of cm 2 ) within few minutes in just one step without any mask, resist or chemical hazards. Twodimensional dot and one-dimensional ripple topographies are generally found to develop on the surfaces of semiconductors due to IBS at room temperature [1][2][3][4][5][6].…”

“…Experimentally, the pattern formation has been studied mostly with Si [3][4][5][6][7][8] because of its easy availability and technological importance in semiconductor industry [9].…”

Large-area flexible nanostripe electrodes featuring plasmon hybridization engineering

“…Further drawbacks are related with master or mask deterioration and to the limited versatility in the design of the mask. Conversely, large area and low cost nanofabrication can be achieved via bottom-up approaches based on self-assembly or self-organization, e.g., recurring to defocused ion beam sputtering (IBS) [43][44][45] at the expense of a reduced uniformity of the patterns on large scale.…”

Surface nanopatterning by ion beam irradiation: compositional effects

“…On Si(100) surfaces, it was obtained that the wavelength increased with temperature due to a surface diffusion mechanism [99] whereas on Si(111) surfaces a more complex behaviour was observed as the pattern morphology evolved with temperature and changed its orientation [100]. The other report to be considered deals with a temperature range from room temperature up to 350 • C [190], which is similar to those employed for IBI with concurrent co-deposition. In this work, it was found that the surface roughness was constant up to 350 • C to decrease for higher temperatures.…”