Temperature and voltage effects in high performance magnetic junctions

Abstract

Based on a quantum ballistic description of spindependent electronic transport in perfect magnetic junctions, the corrections are analyzed to the quantum resonances in their magnetoresistance (MR), due to finite temperature and to finite electric field bias. Considering them separately (varying temperature at fixed field or varying field at fixed temperature), we found monotonously decreasing MR with temperature but non‐monotonously with field. The latter behavior suggests new means for effective tuning and control of these devices and the temperature effect sets the criteria for reaching the quantum enhanced performance in real conditions (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)