Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung‐Hee; Jeong, Seonghoon; Park, Chinho

doi:10.1007/s11664-016-4809-6

Journal of Elec Materi

2016

DOI: 10.1007/s11664-016-4809-6

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Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

M. Siva Pratap Reddy

Peddathimula Puneetha²,

V. Rajagopal Reddy

et al.

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Cited by 15 publications

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A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

Zhang

et al. 2017

J Mater Sci: Mater Electron

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Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

Cited by 15 publications

References 36 publications

A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range

Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode

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