Temperature-Dependent Evaluation of Charge Carriers and Terahertz Generation in Bismuth and Antimony-Based Chalcogenides

Abstract

Bismuth and antimony-based chalcogenides have been extensively publicized in recent years owing to their intrinsic characteristics and inherent topological character. Such a system contains Bi2Se3, Bi2Te3, Sb2Te3, etc. The single crystalline facets of these samples were discovered to have a generation of ~2 THz while having a giant magneto-resistance of around ~300%. These inherent and dynamical features of the system make it resilient for several applications in optoelectronics and spintronics. The temperature-dependent assessment of conductivity, terahertz generation, and charge carrier dynamics aids in understanding the fundamental phenomena in the carrier mechanism of the chalcogenides. This chapter contains the essential fundamental knowledge of the single crystal chalcogenides via charge carrier & phonon dynamics and their response in the terahertz frequency domain.