Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7

Abstract

GaTeSb materials possess excellent phase change properties comparable to conventional GeSbTe-based PCM systems. GaTeSb-based quaternary systems are engineered and evaluated as thin film methodologically using x-ray diffraction, isothermal and non-isothermal calculation of activation energies, differential thermal analysis, followed by device characterization on electrical performances, endurance and retention. Quaternary GaTeSb-based systems are proven to be temperature-robust with fast switching characteristics.

Co-sputtered phase-change Ga–Sb–Te thin films

“…For the samples with less than 40% of Te (Ga 5 Sb 4 Te, Ga 5 Sb 3 Te 2 , Ga 4 Sb 4 Te, and Ga 3 Sb 3 Te 2 ), the peaks around ∼25.5°, ∼28.8°, ∼40.2°, and ∼42.4° are observed in accordance with ref. 19, 20 and 27 for Ga–Sb–Te alloys. Cheng et al 27 measured the DTA of Sb-rich Ga–Sb–Te films claiming one visible exothermal peak (one temperature of crystallization) and therefore assuming one crystalline phase present in the alloy.…”

“…19 Si-doped GaSbTe quaternary materials have been evaluated to be temperature-robust with fast switching characteristics. 20 Memory-cells made of Ga 18 Sb 70 Te 12 can be set–reset at 20–500 ns with electrical currents around 66% of those of Ge 2 Sb 2 Te 5 cells. 21 Large variation in electrical contrast (up to 8 orders of magnitude) together with high optical contrast (4.2) was found for Ga 26 Sb 20 Te 54 thin layers.…”