2006
DOI: 10.1088/0957-4484/17/4/048
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Template synthesis and forming electrical contacts to single Au nanowires by focused ion beam techniques

Abstract: Metallic Au nanowires were electrochemically synthesized in 20 µm thick ion track etched polycarbonate membranes with the nominal pore diameter of 200 nm. Scanning and transmission electron microscopy analysis and x-ray diffraction of samples revealed that the nanowires are dense with a fcc [Formula: see text] texturing. The I-V characteristics of a single Au nanowire were investigated using a four-point microprobe set-up. The Au nanowire was placed in electrical contact with electrodes patterned on planar sub… Show more

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Cited by 42 publications
(34 citation statements)
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“…With growth of nanowires, electrodeposited gold fills the pores and then begins to emerge from them until coverage on the surface takes place. In this case, the total current density increases because the surface area for growth of the deposits is increased [14]. As it is obvious, by increasing overpotential, gold nanowires fill the pores faster, so the filling time decreases.…”
Section: Solutionmentioning
confidence: 96%
See 2 more Smart Citations
“…With growth of nanowires, electrodeposited gold fills the pores and then begins to emerge from them until coverage on the surface takes place. In this case, the total current density increases because the surface area for growth of the deposits is increased [14]. As it is obvious, by increasing overpotential, gold nanowires fill the pores faster, so the filling time decreases.…”
Section: Solutionmentioning
confidence: 96%
“…Then, due to the spherical diffusion around the protrusions a cauliflower growth can be observed which leads to formation of caps on the surface. In the final stage, a complete coverage of caps occurs on the surface [14][15][16][17][18]. In Fig.…”
Section: Solutionmentioning
confidence: 99%
See 1 more Smart Citation
“…[5][6][7] Estimation of electrical parameters of individual 1D nanowires ͑NWs͒ using FIB-assisted nanolithography has been demonstrated in recent reports. [8][9][10] Nevertheless, the formation of Schottky barriers at the metal-NW interfaces, when semiconductor materials are contacted, complicates the nanodevice characterization due to non-Ohmic electrical responses and high contact resistances. 11,12 We have investigated an effective alternative to using conventional field-effect transistor ͑FET͒ geometries, which have been used to determine key parameters of SnO 2 NWs in the past.…”
Section: Introductionmentioning
confidence: 99%
“…This value was found to be higher than that of bulk Au (2.8 · 10 -6 OÁcm) at room temperature. The relatively high value can be related to the nanowire wall roughness (see Figure 4.13), which in turn results in an increased electron scattering at the grain boundaries of the nanowire [90][91][92][93].…”
Section: Electrical Transport Measurements On Single Nanowires Using mentioning
confidence: 99%