Terahertz Detection With a Low-Cost Packaged GaAs High-Electron-Mobility Transistor

Javadi, Elham; Lisauskas, Alvydas; Shahabadi, Mahmoud; Masoumi, Nasser; Zhang, Jingshui; Matukas, Jonas; Roskos, Hartmut G.

doi:10.1109/tthz.2018.2877908

Cited by 15 publications

(9 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We can simplify Equation ( 2 ) with the Rayleigh-Jeans approximation which holds for frequencies

THz at room temperature. Additionally, we can use the relationship between effective area of an antenna and its directivity [ 45 , 46 ] to obtain

. The latter relationship is extremely helpful, as it allows us to make quantitative predictions about the power spectral density available to the detector, without having to consider the physical properties of the antenna.…”

Section: Thermal Sensitivity Of the Detectormentioning

confidence: 99%

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

Čibiraitė-Lukenskienė

Ikamas

Lisauskas³

et al. 2020

Sensors

Self Cite

View full text Add to dashboard Cite

This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz , respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm 2 -sized image of the fingers of a hand with a pixel size of 1 mm 2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection.

show abstract

“…We can simplify Equation ( 2 ) with the Rayleigh-Jeans approximation which holds for frequencies

THz at room temperature. Additionally, we can use the relationship between effective area of an antenna and its directivity [ 45 , 46 ] to obtain

Section: Thermal Sensitivity Of the Detectormentioning

confidence: 99%

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

Čibiraitė-Lukenskienė

Ikamas

Lisauskas³

et al. 2020

Sensors

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, further extension of the frequency coverage and array integration of Schottky diodes are highly desired. A field-effect transistor–based photodetector is compatible with standard silicon microelectronics processing technology and could be a promising candidate for large-scale imaging arrays ( 7 , 9 ), but its narrow response bandwidth represents an obstacle for its wide application.…”

Section: Introductionmentioning

confidence: 99%

Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector

Bai

Chu

et al. 2022

Sci. Adv.

View full text Add to dashboard Cite

High-performance broadband infrared (IR)/terahertz (THz) detection is crucial in many optoelectronic applications. However, the spectral response range of semiconductor-based photodetectors is limited by the bandgaps. This paper proposes a ratchet structure based on the GaAs/Al x Ga 1− x As heterojunction, where the quasi-stationary hot hole distribution and intravalence band absorption from light or heavy hole states to the split-off band overcome the bandgap limit, ensuring an ultrabroadband photoresponse from near-IR to THz region (4 to 300 THz). The peak responsivity of the proposed structure can reach 7.3 A/W, which is five orders of magnitude higher than that of the existing broadband photon-type detector. Because of the ratchet effect, the proposed photodetector has a bias-tunable photoresponse characteristic and can operate in the photovoltaic mode with a broad photocurrent spectrum (18 to 300 THz). This work not only demonstrates a broadband photon-type THz/IR photodetector but also provides a method to study the light-responsive ratchet.

show abstract

“…It was revealed that the origin of the detected signal can be attributed to the interplay of excited 100 GHz currents, the influence of the bonding wires, and substrate-related modes. The importance of resonances related to bonding wires and metallic pads was exposed by detailed investigations of the photoresponse spectra obtained using the Avago ATF-36077 pseudomorphic HEMT (pHEMT) [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics

Tamošiūnas

Minkevičius

Bučius

et al. 2022

Sensors

View full text Add to dashboard Cite

Terahertz (THz) imaging is a powerful technique allowing us to explore non-conducting materials or their arrangements such as envelopes, packaging substances, and clothing materials in a nondestructive way. The direct implementation of THz imaging systems relies, on the one hand, on their convenience of use and compactness, minimized optical alignment, and low power consumption; on the other hand, an important issue remains the system cost and its figure of merit with respect to the image quality and recording parameters. In this paper, we report on the design and performance of an extraordinary low-cost THz imaging system relying on a InP Gunn diode emitter, paraffin wax optics, and commercially available GaAs high-electron-mobility transistors (HEMTs) with a gate length of 200 nm as the sensing elements in a room temperature environment. The design and imaging performance of the system at 94 GHz is presented, and the spatial resolution in the range of the illumination wavelength (∼3 mm) and contrast of nearly two orders of magnitude is determined. The operation of two models of the HEMTs of the same nominal 20 GHz cut-off frequency, but placed in different packages and printed circuit board layouts was evaluated at 94 GHz and 0.307 THz. The presence of two competing contributions—self-resistive mixing and radiation coupling through the antenna effects of the printed circuit boards—to the detected signal is revealed by the signal dependence on the gate-to-source voltage, resulting in a cross-sectional responsivity of 27 V/W and noise-equivalent power of 510 pW/Hz at 94 GHz. Further routes in the development of low-cost THz imaging systems in the range of EUR 100 are considered.

show abstract

Terahertz Detection With a Low-Cost Packaged GaAs High-Electron-Mobility Transistor

Cited by 15 publications

References 35 publications

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector

Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics

Contact Info

Product

Resources

About