Terahertz electrical writing speed in an antiferromagnetic memory

Olejník, K.; Seifert, Tom S.; Kašpar, Zdeněk; Novák, V.; Wadley, P.; Campion, R. P.; Baumgartner, Manuel; Gambardella, Pietro; Němec, Petr; Wunderlich, J.; Sinova, Jairo; Kužel, Petr; Müller, Mélanie; Kampfrath, Tobias; Jungwirth, T.

doi:10.1126/sciadv.aar3566

Cited by 295 publications

(236 citation statements)

References 41 publications

(118 reference statements)

Supporting

Mentioning

232

Contrasting

Unclassified

Order By: Relevance

“…Soon after, similar behavior was also observed in Mn 2 Au . Furthermore, Olejnik et al . demonstrated THz electrical writing speed in CuMnAs, as compared to the typical GHz writing speed in ferromagnets …”

Section: Manipulation Of Magnetic Materials By Spin–orbit Torquessupporting

confidence: 54%

Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

View full text Add to dashboard Cite

The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, spintronics, and nonvolatile memories. In recent years, the discovery of spin–orbit torque has opened a spectrum of opportunities to manipulate the magnetization efficiently. This article presents a review of the historical background and recent literature focusing on spin–orbit torques (SOTs), highlighting the most exciting new scientific results and suggesting promising future research directions. It starts with an introduction and overview of the underlying physics of spin–orbit coupling effects in bulk and at interfaces, and then describes the use of SOTs to control ferromagnets and antiferromagnets. Finally, the prospects for the future development of spintronic devices based on SOTs are summarized.

show abstract

Section: Manipulation Of Magnetic Materials By Spin–orbit Torquessupporting

confidence: 54%

Manipulation of Magnetization by Spin–Orbit Torque

Edmonds

Liu

et al. 2018

Adv Quantum Tech

View full text Add to dashboard Cite

show abstract

“…While numerous aspects are under deeper investigation [e.g., the role of temperature (Meinert, Graulich, and Matalla-Wagner, 2017), details of the reversal dynamics (Olejnik et al, 2017b), and the mechanism of domain formation], these experiments constitute the first clear demonstration of current-driven Néel order manipulation. Most importantly for applications, Olejnik et al (2017b) recently demonstrated ultrafast reversible switching in CuMnAs using 1 ps long writing pulses obtained from THz electromagnetic transients. This reversal is 2 orders of magnitude faster than the one obtained from ferromagnets using spin-orbit torques , establishing the advantage of antiferromagnets for ultrafast operation.…”

Section: A Manipulation By Inverse Spin Galvanic Torquementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

View full text Add to dashboard Cite

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

show abstract

“…Two years later, the THz electrical writing speed in the antiferromagnetic memory device based on CuMnAs was experimentally demonstrated by the same group 45. They fabricated a device consisting of a GaAs substrate, Au contact pads, and a CuMnAs antiferromagnetic thin film with a central cross structure ( Figure a,b).…”

Section: Introductionmentioning

confidence: 99%

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

et al. 2020

View full text Add to dashboard Cite

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric‐field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting‐edge research, including electric‐field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin–orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto‐ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high‐quality room‐temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward‐looking perspective that will promote the rapid development of this field.

show abstract

Terahertz electrical writing speed in an antiferromagnetic memory

Abstract: We demonstrate terahertz electrical writing speed in an antiferromagnetic memory at an energy of the gigahertz speed writing.

Cited by 295 publications

References 41 publications

Manipulation of Magnetization by Spin–Orbit Torque

Manipulation of Magnetization by Spin–Orbit Torque

Antiferromagnetic spintronics

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

Contact Info

Product

Resources

About