Terahertz Plasmonic Sensor based on bulk Dirac Semimetals

This study proposes a dual-functional terahertz device based on the Dirac semimetal, serving as both a sensing element and a band-pass filter. The device’s operating mode can switch between these two functions by utilizing the phase transition property of vanadium dioxide (VO2). When VO2 is in the insulating state, the device functions as a sensing element. The simulation results demonstrate an impressive refractive index sensitivity of 374.40 GHz/RIU (Refractive Index Unit). When VO2 is in the metallic state, the device functions as a band-pass filter, exhibiting a center frequency of 2.01 THz and a 3 dB fractional bandwidth of 0.91 THz. The integration of these dual functionalities within a single terahertz device enhances its utility in both sensing and filtering applications.

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基于二氧化钒和狄拉克半金属的太赫兹传感器/滤波器设计

Zhang Lu,

Chen Zhe,

Sun Chaoyi

et al. 2024

光学学报

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Terahertz Plasmonic Sensor based on bulk Dirac Semimetals

Cited by 3 publications

References 35 publications

Electronic collective excitations in topological semimetals

Electronic collective excitations in topological semimetals

Design and Numerical Modeling of Terahertz Metasurface with Dual Functions of Sensing and Filtering

基于二氧化钒和狄拉克半金属的太赫兹传感器/滤波器设计

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