Terahertz Quantum Cascaded Laser Based on LO-phonon Scattering Using GaAs∕Al[sub x]Ga[sub 1−x]As (x = 0.15) Material System

Abstract

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels AIP Advances 5, 117227 (2015) Abstract. In the present work, THz QCL structures following LO-phonon depopulation are simulated for the different thickness of active/injector (module) region. The simulation was carried out using the GaAs/Al x Ga 1 x As material with x = 0.15. Self consistent conduction band profiles of QCL were obtained by solving the 1D Schrödinger equations under different bias. The simulations were performed with changing the thickness of the module by maintaining depopulation with LO phonon scattering. Simulation results reveal that such QCL structures with different thickness (of active/injector region) could be operated in 3-4 THz range with reasonable oscillator strength.