Terahertz Switching Focuser Based on Thin Film Vanadium Dioxide Zone Plate

Solyankin, P. M.; Esaulkov, Mikhail N.; Черных, И. А.; Kulikov, I. V.; Занавескин, М. Л.; Kaul, A.R.; Makarevich, A. M.; Sharovarov, D. I.; Kameshkov, Oleg E.; Knyazev, B. A.; Shkurinov, A. P.

doi:10.1007/s10762-018-0540-0

Cited by 11 publications

(5 citation statements)

References 21 publications

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“…Vanadium dioxide (VO 2 ) undergoes a reversible metal-to-insulator phase transition (MIT) at a critical temperature ( T MIT ) of 68 °C between insulating monoclinic VO 2 (M 1 ) with high THz transparency and metallic rutile VO 2 (R) with strong THz absorbance and reflection. , This ultrafast (<80 fs) phase transition also involves sharp changes in electrical resistance and can be triggered by various types of stimuli, including thermal heating, electrical current excitation, light irradiation, and mechanical strain. Such unique properties make VO 2 films promising candidates for the role of active medium in tunable THz amplitude modulators, switches, tunable absorbers, emitters, photonic crystals, and metamaterials . To improve the performance of THz switches and modulators, it is necessary to achieve a large THz modulation depth (MD), low insertion loss and MIT temperature, providing a low thermal/optical trigger threshold.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Ivanov

Tatarenko

Gorodetsky

et al. 2021

ACS Appl. Nano Mater.

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We report a feasible and high-throughput method for high-quality W-doped VO 2 nanostructured epitaxial films on rsapphire substrate fabrication. Single-phase, smooth vanadium dioxide thin films with uniform distribution of tungsten (up to 2.3%) are formed using the solvothermal process from ethylene glycol/water V 4+ and W 6+ solutions. Compositional analysis by X-ray photoelectron and energy-dispersive X-ray spectroscopy (XPS and EDX, respectively); structural analysis (X-ray diffraction, Raman spectroscopy, selected area electron diffraction (SAED)); and detailed analysis of the surface morphology and substrate−film interface using scanning electron microscopy, atomic force microscopy, and high-resolution transmission electron microscopy (SEM, AFM, HRTEM, respectively) confirm the formation of nanoscale (50−60 nm) epitaxial W:VO 2 (M 1 ) on r-sapphire with epitaxial relationships (100)VO 2 ∥(101̅ 2)Al 2 O 3 and [010]VO 2 ∥[011̅ 0]Al 2 O 3 . The nanostructured films demonstrate excellent terahertz (THz) transmission properties: a phase transition temperature of 31 °C, a huge THz modulation depth of over 60%, and broad bandwidth (≥2 THz) operation. Hence, they can be efficiently used as active material for tunable THz manipulation devices.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Ivanov

Tatarenko

Gorodetsky

et al. 2021

ACS Appl. Nano Mater.

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“…When temperature is below the phase transition temperature T C , it exhibits a monoclinic phase structure, in a semiconductor insulation state (I-VO 2 ), the infrared transmittance is higher at this state; When temperature is higher than the phase transition temperature T C , it presents a rutile tetragonal phase structure, in a metallic state (M-VO 2 ), and has a lower infrared transmittance [26][27][28]. In recent years, there have been many studies on metasurfaces based on vanadium dioxide, including controlling temperature or heat flux [29,30], asymmetric transmission [31], switchable focus lens [32][33][34], switchable wave-plates [35], beam control [36], and the like. However, most of these designs can only achieve fixed function, or only work under a specific condition [37].…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Metasurface Lens With Tunable Focus Based on Phase Transition Material

Song

Liu²,

Wang

et al. 2021

Front. Phys.

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Metasurfaces have powerful light field manipulation capabilities, which have been extensively studied in the past few years and have developed rapidly in various fields. At present, the focus of metasurface research has shifted to the tunable functionality. In this paper, a temperature-controllable multifunctional metasurface lens based on phase transition material is designed. First of all, by controlling the temperature of the desired working area and the polarization of the incident light, switching among multiple focus, single focus, and no focus at any position can be achieved, and the intensity and helicity of the output light can be adjusted. In addition, a polarization-sensitive intensity-tunable metalens based on the P-B phase principle is designed, when the incident light is linearly polarized light, left-handed circularly polarized light, or right-handed circularly polarized light, it has the same focal point but with different light field intensities. Therefore, the focused intensity can be tunable by the polarization state of the incident light.

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“…By contrast, the binary Fresnel zone plate (FZP) has the characteristics of simple structure, easy manufacturing, and lower costs and assembly complexity, and this is why it has become an indispensable beam steering and imaging device in terahertz electronic systems [ 13 , 14 , 15 , 16 ]. In previous studies, antennas are based on silicon substrates [ 17 ], PCB-FZPs [ 18 ], LIG-FZPs [ 19 ] and other beam deflection devices, which are made of special materials such as liquid crystals [ 20 , 21 , 22 ]. These devices have the disadvantages of high reflection (FZPs’ ring belt materials, such as LIG and metal, and the reflection of a terahertz wave is greater than 85%), complex fabrication, and lack of flexibility.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Thin Terahertz Deflection Device Based on Laser Direct Writing Graphene Oxide Paper

Suo

Zhang

et al. 2022

Micromachines

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In the world of terahertz bands, terahertz beam deflection has gradually attracted substantial attention, due to its great significance in wireless communications, high-resolution imaging and radar applications. In this paper, a low-reflection and fast-fabricated terahertz beam deflection device has been realized by utilizing graphene oxide paper. Using laser direct writing technology, graphene oxide has been patterned as a specific sample. The thickness of the graphene oxide-based terahertz devices is around 15–20 μm, and the processing takes only a few seconds. The experimental results show that the beam from this device can achieve 5.7° and 10.2° deflection at 340 GHz, while the reflection is 10%, which is only 1/5 of that of existing conventional devices. The proposed device with excellent performance can be quickly manufactured and applied in the fields of terahertz imaging, communication, and perception, enabling the application of terahertz technology.

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Terahertz Switching Focuser Based on Thin Film Vanadium Dioxide Zone Plate

Cited by 11 publications

References 21 publications

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Multifunctional Metasurface Lens With Tunable Focus Based on Phase Transition Material

Ultra-Thin Terahertz Deflection Device Based on Laser Direct Writing Graphene Oxide Paper

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Terahertz Switching Focuser Based on Thin Film Vanadium Dioxide Zone Plate

Cited by 11 publications

References 21 publications

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO2 Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Multifunctional Metasurface Lens With Tunable Focus Based on Phase Transition Material

Ultra-Thin Terahertz Deflection Device Based on Laser Direct Writing Graphene Oxide Paper

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Product

Resources

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Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process

Fabrication of Epitaxial W-Doped VO₂ Nanostructured Films for Terahertz Modulation Using the Solvothermal Process