The Advanced Boost Circuit for MOS Analog Switch

Krouglov, Yu.V.; Barinov, V.V.; Timoshenko, Aleksandr

doi:10.1109/iccsc.2008.126

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Recently, studies on some modified bootstrapped switches have been published such as [14,27]. The bootstrapping circuit for NMOS switch "Msn" is shown in Fig.…”

Section: Bootstrapped Nmos Switchmentioning

confidence: 99%

“…There are some differences with the conventional circuit in [24]. Like the proposed circuit in [14], PMOS switches Mp1 and Mp2 are utilized instead of NMOS auxiliary switches in conventional version. Although NMOS auxiliary switch performance is satisfactory for lower input voltages near to the lower power rail (ground), their operation becomes slower by approximating the input signal to the upper power rail (supply voltage).…”

Section: Bootstrapped Nmos Switchmentioning

confidence: 99%

See 1 more Smart Citation

Low-Voltage CMOS Switch for High-Speed Rail-To-Rail Sampling

Sarafi

A’ain

Abbaszadeh

2015

Circuits Syst Signal Process

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Sampling switches have a dominant role in switched-capacitor circuits and analog-to-digital convertors. Since they act as input gates, their nonlinearities directly degrade the quality of the input signals. The scaling-down trend of CMOS technology and increasing demands for high-speed and power-efficient circuits pose design challenge in high-speed sampling switches for low-voltage applications. To address this issue, an optimized CMOS switch is proposed in this paper consisting of a bootstrapped NMOS switch and a boosted PMOS switch as a transmission gate. By utilizing this technique, the nonlinearity resulting from the threshold voltage variation (body effect) of NMOS switch is mitigated, considerably. To evaluate the proposed switch, it is designed in 0.18 μm CMOS process technology. According to the obtained simulation results, this switch can achieve total harmonic distortion of −78.81 and −62.99 dB in 100 MS/s at V dd = 1 Volt and 50 MS/s at V dd = 0.8 V, respectively.

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“…Recently, studies on some modified bootstrapped switches have been published such as [14,27]. The bootstrapping circuit for NMOS switch "Msn" is shown in Fig.…”

Section: Bootstrapped Nmos Switchmentioning

confidence: 99%

Section: Bootstrapped Nmos Switchmentioning

confidence: 99%