The analysis of transit-time effect of bipolar base collector junction breakdown

Abstract

This paper analyzes the transit-time effect of a bipolar biased at base-collector junction breakdown condition. Both simulation and experiment show that dynamic negative resistance, due to the transit-time effect, can be achieved under the avalanche breakdown condition. Therefore, a bipolar biased at breakdown can be used as a transit-time diode, with the potential to generate RF power for millimeter / sub-millimeter frequency applications.