The Backtracking Search for the Optimal Design of Low-Noise Amplifiers

Garbaya, Amel; Kotti, Mouna; Fakhfakh, Mourad; Siarry, Patrick

doi:10.1007/978-3-319-19872-9_14

Cited by 4 publications

(5 citation statements)

References 30 publications

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“…Figure 1 presents a CMOS LNA, which topology was developed for UMTS applications, see [1,42]. R 1 , R 2 and M 3 form the bias circuitry.…”

Section: An Umts Lnamentioning

confidence: 99%

“…M 2 forms the isolation stage between the input and the output of the circuit. L L , R L , and C L form the circuit's output impedance [1].…”

Section: An Umts Lnamentioning

confidence: 99%

“…M2 forms the isolation stage between the input and the output of the circuit. LL, RL, and CL form the circuit's output impedance [1]. The kriging modelling technique is used for constructing models of the scattering parameters (S21, S11, S22), the noise figure, and the third-order intercept point.…”

Section: An Umts Lnamentioning

confidence: 99%

“…Figure 7 presents the CMOS transistor level schematic of a LNA for multistandard applications in the frequency range 1.5-2.5 GHz [1]. The proposed LNA design encompasses a cascade architecture for reducing the Miller effect and uses the reverse isolation.…”

Section: A Multistandard Cmos Lnamentioning

confidence: 99%

“…M 3 , R 2 , and R 1 form the biasing circuitry of the input transistor. L 2 , C 1 , and C 2 allow the input matching [1]. We refer the reader to [40] for further details regarding the LNA topologies and characteristics.…”

Section: A Multistandard Cmos Lnamentioning

confidence: 99%

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Metamodelling Techniques for the Optimal Design of Low-Noise Amplifiers

et al. 2020

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In this article we deal with the optimal sizing of low-noise amplifiers (LNAs) using newly proposed metamodeling techniques. The main objective is to construct metamodels of main performances of the LNAs (namely, the third intercept point (IIP3), the scattering parameters (Sij), and the noise figure (NF)) and use them inside an optimization kernel for maximizing the circuits’ performances. The kriging surrogate modelling technique is used for constructing these models. The particle swarm optimization (PSO) technique is considered as the optimization metaheuristic. Two CMOS amplifiers are considered: a UMTS LNA and a multistandard LNA. Obtained results show that, at the considered working frequencies, the first LNA exhibits at 2.14 GHz a noise figure of 1.30 dB, an S21 of 16.01 dB, an S11 of −12.60 dB, and an IIP3 of 8.30 dBm. At 2 GHz, the second LNA has a noise figure of 1.24 dB, an S21 of 17.16 dB, an S11 of −13.74 dB, and an IIP3 of 4.30 dBm. Comparisons between results obtained using the constructed models and those of the simulation are presented to show the perfect agreement between them.

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“…Figure 1 presents a CMOS LNA, which topology was developed for UMTS applications, see [1,42]. R 1 , R 2 and M 3 form the bias circuitry.…”

Section: An Umts Lnamentioning

confidence: 99%

“…M 2 forms the isolation stage between the input and the output of the circuit. L L , R L , and C L form the circuit's output impedance [1].…”

Section: An Umts Lnamentioning

confidence: 99%

Section: An Umts Lnamentioning

confidence: 99%

Section: A Multistandard Cmos Lnamentioning

confidence: 99%

Section: A Multistandard Cmos Lnamentioning