The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

Liao, Chuan; Fretwurst, E.; Garutti, E.; Schwandt, J.; Moll, M.; Himmerlich, Anja; Gurimskaya, Y.; Pintilie, I.; Nitescu, Andrei; Li, Z.; Makarenko, Leonid

doi:10.1109/tns.2022.3148030

Cited by 8 publications

(9 citation statements)

References 44 publications

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“…The changes in Ge content perturb the ratio of the B-Si and Si-B-Ge states within crystal bulk and thereby local strain and density of N S . This might be a reason for the metastability of B i O i complexes, which appeared in two configurations of [B i O i A ] and [B i O i B ] [ 2 , 3 ]. Additionally, it had been concluded [ 31 ] that most of the strain in SiGe is accommodated by variations of both the bond angle and bond length.…”

Section: Discussionmentioning

confidence: 99%

“…The radiation-induced boron dopant transformations in p -type Si lead to the so-called effect of “acceptor removal” [ 1 , 2 , 3 , 4 , 5 ], which degrades the performance of particle detectors. This happens due to the substitutional lattice site boron (B s ) transformation into interstitial (B i ) boron under irradiation.…”

Section: Introductionmentioning

confidence: 99%

“…The change of this state can be modified by illumination, temperature jump or applied external electrical field, where the transformations are mediated by electron–phonon interaction [ 6 ]. The B i O i complex in Si is also a metastable defect existing in at least two configurations, namely [B i O i A ] and [B i O i B ] [ 2 , 3 ]. The density of the [B i O i A ] configuration complexes is usually reduced under external perturbation using light or temperature (heating to 353 K) due to their transformations to [B i O i B ] state [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

“…The B i O i complex in Si is also a metastable defect existing in at least two configurations, namely [B i O i A ] and [B i O i B ] [ 2 , 3 ]. The density of the [B i O i A ] configuration complexes is usually reduced under external perturbation using light or temperature (heating to 353 K) due to their transformations to [B i O i B ] state [ 3 ]. However, the maximum concentration of [B i O i A ] can then be restored [ 2 , 3 ] by retention in dark at reduced temperatures [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

“…The density of the [B i O i A ] configuration complexes is usually reduced under external perturbation using light or temperature (heating to 353 K) due to their transformations to [B i O i B ] state [ 3 ]. However, the maximum concentration of [B i O i A ] can then be restored [ 2 , 3 ] by retention in dark at reduced temperatures [ 3 ]. It has been reported [ 8 , 9 , 10 ] that silicon–germanium (Si 1−x Ge x ) alloys are promising for the production of detectors operational in radiation harsh environments.…”

Section: Introductionmentioning

confidence: 99%

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5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

et al. 2022

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Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the p-type silicon doped with boron. In this work, minority carrier traps in p-type silicon (Si) and silicon–germanium (Si1−xGex) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in p-type silicon (Si) and silicon–germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron–oxygen (BiOi) and the vacancy–oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of Si1−xGex (with x= 0–0.05) materials.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

et al. 2022

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Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon

Lauer

Peh

Krischok

et al. 2022

Physica Status Solidi (a)

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Fast silicon detectors are crucial for a lot of applications, [1] e.g., the experiments at large hadron collider (LHC) at CERN to obtain timeresolved trajectories of particles. A concept to realize such fast silicon detectors are the low-gain avalanche detectors (LGAD). They combine the advantages of normal n-i-p-diodes such as a low noise with a large signal of avalanche multiplication diodes. [2] LGADs operate with a gain of about 10. The avalanche multiplication region is usually obtained by deep boron doped layers. [3] Nevertheless, these LGADs have a drawback if they are irradiated. The gain layer "disappears" after irradiation as a consequence of a deactivation of the gain layer doping species, which is usually boron. [4,5] This means that, e.g., boron, loses after irradiation its properties as an acceptor to provide a negative space charge.In this contribution, the focus is first on LGAD device manufacturing at CiS. Afterward, an experiment is described and discussed, which investigates the acceptor removal phenomenon for the three acceptors boron, gallium, and indium in silicon. Therefore, boron, gallium, and indium were implanted into silicon. Additionally, coimplantation of carbon, oxygen, nitrogen, and fluorine was made. It was found in the literature that for carbon co-implantation the acceptor removal effect can be reduced. [6] Therefore, this study investigates different co-implantation species if they have an impact on the acceptor removal phenomenon. The samples underwent an activation anneal and were then investigated by 4-point-probe (4pp), low temperature photoluminescence spectroscopy (LTPL) and secondary ion mass spectrometry (SIMS) before and after irradiation with electrons and protons.

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Electronic properties and defect levels induced by n/p-type defect-complexes in Ge

Igumbor

Olaniyan²,

Dongho-Nguimdo³

et al. 2022

Materials Science in Semiconductor Processing

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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

Abstract: CITATION liao, chuan (2021): The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in ptype epitaxial silicon diodes. TechRxiv. Preprint.

Cited by 8 publications

References 44 publications

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys

Development of Low‐Gain Avalanche Detectors in the Frame of the Acceptor Removal Phenomenon

Electronic properties and defect levels induced by n/p-type defect-complexes in Ge

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