The control of gap width in the low-dimensional systems with charge density waves instability

Дмитриев, А. И.; Lashkarev, G. V.; Kiselyev, V. K.; Кононенко, В. К.; Kuleshov, E. M.

doi:10.1007/bf02066637

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…Another chalcogenide currently emerging as a high potential material for use on optical applications is the layered hexagonal metal chalcogenide InSe, atomically thin films of which are possible to fabricate [16][17][18][19][20][21] . While in its bulk form InSe [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] is a direct gap semiconductor 37 , its electronic structure undergoes significant changes upon exfoliation to few-layer or monolayer thickness, with particularly interesting optical properties observed in recent experiments 1,38 . Density functional theory (DFT) calculations for single layer crystals of InSe 39,40 predict a large increase in the band gap as compared to bulk crystals, with the valence band maximum slightly shifted from the Γ point.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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We present a tight-binding (TB) model and k · p theory for electrons in monolayer and few-layer InSe. The model is constructed from a basis of all s and p valence orbitals on both indium and selenium atoms, with tight-binding parameters obtained from fitting to independently computed density functional theory (DFT) band structures for mono-and bilayer InSe. For the valence and conduction band edges of few-layer InSe, which appear to be in the vicinity of the Γ point, we calculate the absorption coefficient for the principal optical transitions as a function of the number of layers, N . We find a strong dependence on N of the principal optical transition energies, selection rules, and optical oscillation strengths, in agreement with recent observations 1 . Also, we find that the conduction band electrons are relatively light (m ∝ 0.14 − 0.18me), in contrast to an almost flat, and slightly inverted, dispersion of valence band holes near the Γ-point, which is found for up to N ∝ 6.

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Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model

2016

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Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

et al. 2013

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Strong quantization effects and tuneable near‐infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ‐rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.

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