The crystal structure of solid solutions formed in the HfO2-Sc2O3 nanoscale system

Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

“…The internal pressure of the nanoparticles induced by the large surface energy and the compressive strain exerted by the substrate, are suggested to work together to stabilize the r-phase. 31 The presence of the rhombohedral phase was later seen in HZO epitaxial films 58 and HfO 2 -Sc 2 O 3 solid solutions films 59 grown on silicon where lattice distortion also shows the stabilizing effect of compressive strain on the r-phase.…”