The effect of oxidation on anomalous diffusion in silicon

Dobson, P. S.

doi:10.1080/14786437108217030

Cited by 34 publications

(18 citation statements)

References 6 publications

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“…It has been suggested (17)(18)(19)(20) that such an excess of interstitials and/or depletion of vacancies could be created by the oxidation process. Actually, interstitial flows may have some bearing on a possible orientation dependence of the vacancy contribution and the normalized (B/A)" at high doping levels.…”

Section: Discussionmentioning

confidence: 99%

Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion

Plummer

1979

J. Electrochem. Soc.

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A physical model based on the statistics of silicon point defects was described in the preceding companion paper to explain the faster oxidation rates of heavily doped silicon. The mechanism by which dopant levels affect the interface oxidation rate was postulated to be an increase in reaction sites or silicon vacancies caused by the shifting of the Fermi level. The predictions of this model for n + and p+ silicon oxidation kinetics are tested in this paper under a wide variety of oxidation conditions. The physical meaning of the model and its implications for other process phenomena are pursued.

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Section: Discussionmentioning

confidence: 99%

Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion

Plummer

1979

J. Electrochem. Soc.

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“…In comparison to annealing in inert ambient, the diffusion of phosphorus (Masetti et al, 1973) and boron (Antoniadis et al, 1978) were found to be enhanced while the diffusion of antimony was found to be retarded (Mizuo and Higuchi, 1981). Supported by the growth and shrinkage of extended defects identified as agglomerates of self-interstitials, the current understanding of oxidation-enhanced and retarded diffusion is based on the explanation of Dobson (1971) and Hu (1974): During oxidation, not all of the silicon atoms from the consumed silicon layer are oxidized. Most of them will be incorporated into the growing silicon dioxide layer while a small fraction segregates into the silicon and increases there the concentration of self-interstitials.…”

Section: Nonequilibrium Processesmentioning

confidence: 93%

Role of Defects in the Dopant Diffusion in Si

Pichler

2015

Semiconductors and Semimetals

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“…The impurity content in this flux will be proportional to the impurity concentration and the enhancement of the total impurity flux will be greatest near the oxidizing interface in agreement with the large effective diffusion coefficients observed in this region (Tannenbaum 1961). The total impurity flux consists of that due to the oxidationinduced mass transfer in addition to the Fickian diffusion flux and i t has been shown (Dobson 1971) that this results in a modification to the second-order diffusion equation:…”

Section: $2 Basis Of Methodsmentioning

confidence: 99%

“…The effect of oxidation on diffusion in silicon has been quantitatively described in a model (Dobson 1971) which considers that the anomalous profiles are caused by additional mass transfer associated with the accommodation in the lattice of the inward growing oxide. It is the purpose of this paper to show that, provided the sense of the oxidationinduced mass transfer is known, the mechanism of impurity diffusion can be simply and unambiguously determined from measurements such as those made by Ghoshtagore.…”

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confidence: 99%