The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios

Lee, Do-Seon; Lee, Won-Jong

doi:10.1143/jjap.48.076004

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Interestingly, the authors found that the hfac desorbed from the surface as a dimer. This discovery led to a flurry of research with a variety of precursors, 14,15 surface treatments 16,17 and substrates. 18 Molecular iodine has also been used to catalyze copper metal deposition.…”

Section: Iodine Catalyzed Copper Depositionmentioning

confidence: 99%

Trends in Copper Precursor Development for CVD and ALD Applications

Gordon

Kurek

Barry

2014

ECS J. Solid State Sci. Technol.

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The continued dominance of copper in microelectronic manufacturing is due in part to the techniques that have kept pace with the relentless trend towards smaller feature sizes. Pure and defect-free copper features can be created at these and smaller scales using gas phase deposition methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here we review the deposition processes and in particular surface chemistry for depositing copper metal by CVD and ALD. A summary of known processes is given, and new trends in copper film deposition research are discussed. As well, process parameters and properties of copper films deposited from precursors using key ligand systems such as aminoalkoxides, amidinates, guanidinates, betadiketonates and betaketoiminates are presented. Surface chemistry is examined from the point of view of the similarities of CVD and ALD, considering precursors that can be used in both types of processes. This serves to highlight trends in decomposition mechanisms and illuminates some interesting similarities in process temperature and other parameters.

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Section: Iodine Catalyzed Copper Depositionmentioning

confidence: 99%

Trends in Copper Precursor Development for CVD and ALD Applications

Gordon

Kurek

Barry

2014

ECS J. Solid State Sci. Technol.

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“…Interestingly, the authors found that the hfac desorbed from the surface as a dimer. This discovery led to a flurry of research with a variety of precursors, [95,96] surface treatments, [97,98] and substrates. [99] Molecular iodine has also been used to catalyze copper metal deposition.…”

Section: Iodine Catalyzed Copper Depositionmentioning

confidence: 99%

Development of Volatile Inorganic Compounds and Their Application for Chemical Vapour Deposition of Metal and Metal Oxide Thin Films

Kurek¹

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Chemical vapour deposition is a necessary and important technology for the manufacture of nano-thin metal films. The reactivity and thermal stability of the metal complexes used in this process are key to the deposition process.Through logical design, guanidinate ligands have evolved into iminopyrrolidinates to prevent decomposition pathways. These ligands were first tested on aluminum metal centres. Iminopyrrolidinates have been further stabilized with additional methyl moieties and have led to promising new copper precursors. Copper metal is desirable for interconnecting material in electronics due to its high conductivity.The reactivity of 1,3-diisopropyl-imidazolin-2-ylidene copper hexamethyl disilazide has been explored and yielded three new copper metal compounds.Sputtered thin films of gold have been used in metal assisted chemical etching to produce high aspect ratio structures on the surface of silicon substrates. PrefaceHere are the full bibliographical details for all reproduced publications included in this thesis. The supervisor, Seán T. Barry, and the student, Agnieszka Kurek, confirm that the student was fully involved in setting up and conducting the research, obtaining data and analyzing results, as well as preparing and writing the material presented in the co-authored articles integrated in this thesis. Additionally, the supervisor confirms the information provided by the student in this preface.To cite material from this thesis, please cite both this thesis and the relevant article from the chapter, if the chapter is based on a published work. Kurek, A.; Gordon, P.G.; Karle, S.; Devi, A.; Barry, S.T. Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications, Aust. J. Chem. 2014, 67, 989-996. Wasslen, Y.A.; Kurek, A.; Johnson, P.A.; Pigeon, T.C.; Monillas, W.H.; Yap, G.P.A.; Barry, S.T. Coyle, J.P.; Pallister, P.J.; Kurek, A.; Sirianni, E.R.; Yap, G.P.A.; Barry, S.T. Copper Iminopyrrolidinates: A Study of Thermal and Surface Chemistry, Inorg. Chem. 2013, 52, 910.

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Superconformal copper filling of a nano-scale trench by nucleation suppression at the trench entrance during metal organic chemical vapor deposition

Moon

Kim

et al. 2010

Thin Solid Films

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The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios

Cited by 3 publications

References 15 publications

Trends in Copper Precursor Development for CVD and ALD Applications

Trends in Copper Precursor Development for CVD and ALD Applications

Development of Volatile Inorganic Compounds and Their Application for Chemical Vapour Deposition of Metal and Metal Oxide Thin Films

Superconformal copper filling of a nano-scale trench by nucleation suppression at the trench entrance during metal organic chemical vapor deposition

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