The effect of post annealing temperature on grain size of indium-tin-oxide for optical and electrical properties improvement

Ahmed, Naser M.; Sabah, Fayroz A.; Abdulgafour, H.I.; Alsadig, Ahmed; Sulieman, Abdelmoneim; Alkhoaryef, M.

doi:10.1016/j.rinp.2019.102159

Cited by 125 publications

(63 citation statements)

References 34 publications

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“…As explained previously, the larger negative-charge loss with the retention time was observed for the SANOS device owing to the smaller energy band gap of Al 2 O 3 than that of high-temperature-annealed SiO 2 . (5,(9)(10)(11)(12)(13) In contrast, a smaller negativecharge loss with the retention time was observed for the SONOS device owing to the larger energy band gap of HTO SiO 2 than that of Al 2 O 3 . (5,(9)(10)(11)(12)(13) In comparison, the SAONOS device showed better reliability as a UV-TD sensor than the SANOS device.…”

Section: T Stability Vs Retention Timementioning

confidence: 99%

Performance Improvement of SAONOS Device as UV-total-dose Nonvolatile Sensor with Al2O3/SiO2 Bilayer Blocking Oxide

Hsieh¹,

Jong²,

Tseng³

2020

Sensors and Materials

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A silicon-alumina oxide-silicon oxide-silicon nitride-silicon oxide-silicon device with a bilayer Al 2 O 3 /SiO 2 blocking oxide (SAONOS device) is a candidate ultraviolet (UV) nonvolatile total dose (TD) radiation sensor. In this work, UV radiation induces a significant increase in the threshold voltage V T for an SAONOS device under positive gate voltage (PGV). The change in V T for the SAONOS device after UV radiation has a correlation with UV-TD up to 100 mW‧s/cm 2. The experimental results indicate that the radiation-induced increase in V T for the SAONOS device under PGV is nearly 3 V after 100 mW‧s/cm 2 TD-UV radiation. The performance of the SAONOS device as a UV nonvolatile TD sensor was thus improved. Meanwhile, the experimental results show that the V T retention performance of the SAONOS device after UV irradiation is also improved after 10 years of retention. The SAONOS device in this study has demonstrated its feasibility for UV nonvolatile TD radiation sensing application in the future.

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Section: T Stability Vs Retention Timementioning

confidence: 99%

Performance Improvement of SAONOS Device as UV-total-dose Nonvolatile Sensor with Al2O3/SiO2 Bilayer Blocking Oxide

Hsieh¹,

Jong²,

Tseng³

2020

Sensors and Materials

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“…It is known that the phase transition behavior of crystallizable metal oxide materials is significantly affected by film thickness (i.e., geometrical confinement) as well as annealing time and T A 43 – 45 . IZTO films of different thicknesses of 5, 10, 19, 30, and 50 nm were sputtered on SiO 2 substrates and annealed at 700 °C for 1, 2 or 4 h. Figure 1 shows typical SEM morphologies of the 700 °C-annealed IZTO films showing the structural evolution from particle-like, sheaf-like, to spherulitic grains as a function of the annealing time and thickness.…”

Section: Resultsmentioning

confidence: 99%

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Kim

et al. 2020

Sci Rep

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We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility (µFE) and on/off current ratio (ION/OFF) values of 22.4–35.9 cm2 V−1 s−1 and 1.0–4.0 × 108, respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest µFE value of 39.2 cm2 V−1 s−1 in the transistor as well as an excellent ION/OFF value of 9.7 × 108. Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (~ 0.31 eV) below the conduction band edge.

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“…The increase in substrate temperature was relatively low during the sputtering process. The relatively low temperature could contribute to be the final ITO film being amorphous [29,30].…”

Section: Properties Of Filmsmentioning

confidence: 99%

Effect of Magnetic Field Arrangement of Facing Targets Sputtering (FTS) System on Controlling Plasma Confinement

Kim

2020

Coatings

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Conventional sputtering method uses a single cathode with a permanent magnet. Facing targets sputtering (FTS) methods consists of two cathodes. Because of a unique structure, FTS can prepare high quality films with low temperature and low plasma damage. During the film sputtering process, density and confinement of discharged plasma depend on the arrangement of a permanent magnet in the cathode. In this study, we designed two types of permanent magnet arrangements in the FTS system and the designed permanent magnet was inserted into two cathodes in the FTS system. The system was operated in different permanent magnet conditions, and their discharge voltage and properties of as-grown films were recorded. In the designed FTS, compared to a conventional magnetron sputtering method, the substrate temperature increased to a value under 80 °C, which is relatively low, even though the films’ sputtering process was completed.

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The effect of post annealing temperature on grain size of indium-tin-oxide for optical and electrical properties improvement

Cited by 125 publications

References 34 publications

Performance Improvement of SAONOS Device as UV-total-dose Nonvolatile Sensor with Al2O3/SiO2 Bilayer Blocking Oxide

Performance Improvement of SAONOS Device as UV-total-dose Nonvolatile Sensor with Al2O3/SiO2 Bilayer Blocking Oxide

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Effect of Magnetic Field Arrangement of Facing Targets Sputtering (FTS) System on Controlling Plasma Confinement

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