The effect of series resistance on capacitance–voltage characteristics of Schottky barrier diodes

Şahin, Bünyamin; Çetin, H.; Ayyıldız, E.

doi:10.1016/j.ssc.2005.05.050

Cited by 96 publications

(32 citation statements)

References 19 publications

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“…It has been shown that the electrical properties and stability of semiconductor devices are strongly influenced by contaminants inadvertently introduced during the many processing steps involved during device fabrication [26]. It is also known that the interface states and chemical reactions between metals and semiconductors at interface also play an important role in the electrical properties of devices.…”

Section: Resultsmentioning

confidence: 99%

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

Chawanda

Nyamhere

Auret

et al. 2010

Phys. Status Solidi (c)

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SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film had the main Si‐O‐C bond with the molecule vibration mode in the range of 930∼1230 cm‐1 which consists of C‐O and Si‐O bonds related to the cross link formation according to the dissociation and recombination. The C‐O bond originated from the elongation effect by the neighboring highly electronegative oxygen atoms at terminal C‐H bond in Si‐CH3 of 1270 cm‐1. However, the Si‐O bond was formed from the second ionic sites recombined after the dissociation of Si‐CH3 of 1270 cm‐1. Increment of Si‐O bond in the Si‐O‐C main bond contributed to increase the hardness and decrease the roughness because of the decreasing of the carbon content witch is related to the space effect. The dielectric constant of SiOC film was decreased by lowering the polarization which consists of the ionic and electronic polarity. Increment of Si‐O bond in a right shoulder at the main bond was interpreted by the red shift observed in FTIR spectra. Moreover, the increment of Si‐O bond and decrement of carbon content induced to decrease the ionic polarity and then decreased the dielectric constant (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

Chawanda

Nyamhere

Auret

et al. 2010

Phys. Status Solidi (c)

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“…1 are collected in Table I. The series resistance is low, 7,8 which allows one to conclude that the quality of the junction is good. The ideality factor is between 1 and 2, which means that the current is limited by the recombination of minority carriers as well as majority carriers.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Investigation of Defects Origin in p-Type Si for Solar Applications

Gwóźdź

Płaczek‐Popko

Mikosza

et al. 2017

Journal of Elec Materi

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In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

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“…Such behavior of the C and G/w reverse voltage is attributed to particular distribution of interface states and series resistance [63,64] There are several methods for the calculation M A N U S C R I P T…”

Section: A C C E P T E D Accepted Manuscriptmentioning

confidence: 99%

Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method

Çakıcı

Güzeldir

Sağlam

2015

Journal of Alloys and Compounds

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The effect of series resistance on capacitance–voltage characteristics of Schottky barrier diodes

Cited by 96 publications

References 19 publications

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

Comparison of metal Schottky contacts on n‐Ge (100) at different annealing temperatures

Investigation of Defects Origin in p-Type Si for Solar Applications

Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method

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