The effect of SiO2 buffer layer on the electrical and structural properties of Al-doped ZnO films deposited on soda lime glasses

Properties and Analysis of Transparency Conducting AZO Films by Using DC Power and RF Power Simultaneous Magnetron Sputtering

“…Figure 3(a) gives the in-plane stress for the AZO as deposited at 325 ∘ C with various RF power; the stress generally increases with the RF power. used [17][18][19]. 80 W DC power and 30 W RF power were used during sputtering.…”

“…However, AZO film made by DC sputtering method has higher deposition rate than that made by RF sputtering method. Few factors will affect the quality, transparency, and conductivity of AZO films, such as grain size, crystallinity, and defects of different types [17]. In this work, we report the results of making AZO films using DC and RF sputtering simultaneous methods both as-deposited and annealed samples, to check their conductivity with acceptable deposition rate.…”

Fabrication of titanium zinc oxide (TZO) sol–gel derived nanostructured thin film and investigation of its optical and electrical properties

“…The doped ZnO thin films have low resistivity and are transparent in the visible region. There are several reports on ZnO nanostructured thin films doped with different elements such as Al, Ga, In, Ti, Li, P, N, Ni, , and Co [10][11][12][13][14][15]. Aluminum zinc oxide (AZO) thin film immobilized on glass substrates has been extensively studied because of its excellent electro-optical properties.…”

Effect of SiO2and Nb2O5Buffer Layer on Optical Characteristics of ITO Thin Film

“…We assume the decrease of sheet resistance in the ITO film with an optimized buffer layer is related to the change of ITO surface morphology. It was known that a smoother surface has a positive effect on decreasing resistivity [23]. Fig.…”