The effect of substrate temperature on the properties of ITO thin films for OLED applications

Reddy, VangaRaghava; Das, Kailash Chandra; Dhar, A.; Ray, Swati

doi:10.1088/0268-1242/21/12/043

Cited by 94 publications

(48 citation statements)

References 28 publications

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“…ITO thin films were deposited on 1.0 mm thick microscope glass slides by the DCMS and RFMS techniques using an ITO target with a purity of 99.99% and a weight per cent of 10 to 90 for SnO 2 and In 2 O 3 , respectively. The sputtering system [25] has four 2 inch heads (AJA Int.)…”

Section: Methodsmentioning

confidence: 99%

High quality ITO thin films grown by dc and RF sputtering without oxygen

Tuna

Selamet

Aygün

et al. 2010

J. Phys. D: Appl. Phys.

278

131

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High quality indium tin oxide (ITO) thin films were grown without oxygen by both dc and RF magnetron sputtering techniques on glass substrates. The effects of substrate temperature, film thickness and sputtering method on the structural, electrical and optical properties of the as-grown films were investigated. The results showed that the substrate temperature had substantial effects on the film properties, in particular on the crystallization and resistivity. When the substrate temperature was increased to 150 • C, crystallization in the (2 2 2) plane started appearing for both dc and RF sputtered films. We additionally found that with further increments of substrate temperature, the preferred crystallization orientation changed differently for dc and RF sputtered films. Optical transmission in the visible region for a film thickness of 70 nm was found to be above 85%. The bandgap was calculated to be about 3.64 eV for the substrate temperature of 150 • C for a 70 nm thick film. The value of the bandgap increased with respect to the increment in film thickness as well as substrate temperature. We also measured the temperature dependence of the resistivity and Hall coefficient of the films, and calculated the carrier concentration and Hall mobility. Very low room temperature resistivities for dc and RF magnetron sputtered grown films of about 1.28 × 10 −4 cm and 1.29 × 10 −4 cm, respectively, were obtained.

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Section: Methodsmentioning

confidence: 99%

High quality ITO thin films grown by dc and RF sputtering without oxygen

Tuna

Selamet

Aygün

et al. 2010

J. Phys. D: Appl. Phys.

278

131

View full text Add to dashboard Cite

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“…Various growth conditions may affect the crystalline, impurity levels and surface roughness as well as the band gap of the grown thin films [3,6]. Various techniques, such as electron beam evaporation [7], ion beam-assisted deposition [8], pulsed laser ablation [9,10], ion implantation [11] and RF/DC magnetron sputtering [12][13][14], are applied for deposition of ITO thin films.…”

Section: Introductionmentioning

confidence: 99%

Structural and morphological properties of ITO thin films grown by magnetron sputtering

2015

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Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using fourpoint probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 9 10 -5 X cm.

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“…Such behaviour can be explained by the fact that according to the BursteinMoss model for degenerate semiconductors the lowest states of the parabolic conduction band are filled with charged carriers [20,21]. We assume that a smaller (than 3.37 eV predicted for ZnO at RT) value of E g in our ZnO Figure 2 Transmission spectra (at 300 K) of examined ZnO/glass films.…”

Section: Resultsmentioning

confidence: 96%

Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique

Krajewski

Dybko

Luka

et al. 2010

phys. stat. sol. (b)

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This paper reports on the electrical and optical properties of zinc oxide thin films grown at the temperature range between 160 and 240 8C by the atomic layer deposition method using diethylzinc (Zn(C 2 H 5 ) 2 , DEZn) and deionized water precursors. Silicon and glass were used as substrates for the ZnO growth. These films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), low temperature photoluminescence (LT PL) and low temperature Hall effect measurements. This analysis revealed that all the obtained as-grown ZnO layers are fairly smooth (with a roughness RMS parameter less than 4 nm), show a metallic-like conductivity, exhibited a carriers' concentration (n) of 10 19 -10 20 cm À3 which was found to be practically independent of temperature between 7 and 300 K. From the LT PL spectra, it was established that the carriers' concentration is nearly inversely proportional to the intensity of the LT PL edge emission peak. These observations, together with the fact that the Hall mobility slightly increases at higher temperatures, indicate the existence of a competitive scattering mechanism (on grain boundaries as well as on ionized impurities). However, ionized impurity scattering seems to be the dominant factor limiting the carrier mobility in the discussed case. Moreover, the results suggest that efficient non-radiative Auger processes are responsible for the observed photoluminescence (PL) quenching in the samples with higher electron concentration.

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The effect of substrate temperature on the properties of ITO thin films for OLED applications

Cited by 94 publications

References 28 publications

High quality ITO thin films grown by dc and RF sputtering without oxygen

High quality ITO thin films grown by dc and RF sputtering without oxygen

Structural and morphological properties of ITO thin films grown by magnetron sputtering

Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique

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