The effect of temperature and bias on the energy storage of a Ru/YSZ/Ru thin-film device

Romo, Oscar Arturo; López-Noda, R.; Arce, Jorge Luis Vázquez; Íñiguez, Enrique; Mercado, Cesar Alberto López; Solorio, Fernando; Rebellón, Julia; Read, John; Tiznado, H.

doi:10.1016/j.energy.2022.124199

Cited by 6 publications

(9 citation statements)

References 34 publications

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“…Therefore, they are expected to have a greater slope since they are strictly considered unit cells without defects. According to previous observations, our nanometer‐thick YSZ electrolytes are polycrystalline 49 . In addition, we have observed that the residual stress is modulated by varying thicknesses 13 .…”

Section: Resultssupporting

confidence: 81%

“…According to previous observations, our nanometer-thick YSZ electrolytes are polycrystalline. 49 In addition, we have observed that the residual stress is modulated by varying thicknesses. 13 Therefore, the experimental diffusivity is expected to have a lower slope than the theoretical one.…”

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 86%

“…Although our measurements were up to 170 • C in this study, the proposed method can be applied at any temperature by identifying the appropriate operating voltage window. In our recent research, 13,48,49 we comprehensively investigated transport phenomena in nanometer-thick YSZ within a temperature range from room temperature to 200 • C and operating voltages from 0 to 6 V.…”

Section: Temperature Dependencementioning

confidence: 99%

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Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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This work aims to demonstrate that chronoamperometry is a valuable tool for determining diffusivities in all‐solid‐state nanometer‐thick cells. The transient current in chronoamperometry of electrochemical cells under constant voltage is described by firstly considering purely capacitive processes, defined by RC circuit equations, and then purely diffusive processes, by Cottrell's equations. The physical meaning of the equations has been amply described in liquid cells with porous electrodes but scarcely in solid‐state cells. We studied Ru/YSZ/Au and Ru/YSZ/Ru parallel nano‐cells at temperatures between 50°C and 170°C and voltages between 0.5 V and 1.5 V, where non‐faradaic processes occur. The calculated diffusive and capacitive contributions at different temperatures obey the Arrhenius law. The activation energy was associated with vacancies, the major carrier during electrical transport. The analysis discusses other parameters, such as capacitance, effective concentration, and leakage current. The experimental diffusivity of YSZ electrolytes was compared with diffusivity values obtained by the statistical moment method.This article is protected by copyright. All rights reserved

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Section: Resultssupporting

confidence: 81%

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 86%

Section: Temperature Dependencementioning

confidence: 99%

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Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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“…The comprehensive material characterization of the fabricated cells had been thoroughly presented in the previous works. [26,48,49] The analysis includes the structural, surface, vibrational, and optical properties.…”

Section: Methodsmentioning

confidence: 99%

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Vazquez‐Arce,

Molina‐Reyes,

Contreras

et al. 2023

Adv Elect Materials

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The physics behind the switching kinetics of memristors is gradually becoming clearer. The periods required for the onset of electromigration within memristors and the activation or deactivation of the low‐resistance state—referred to as the incubation and switching times—exhibit non‐linearity with applied voltage. This behavior prevails depending on the rate‐limiting step comprising nucleation and filament growth, electron transfer at the electrode/electrolyte interface, and ion migration through the electrolyte. Herein, a model is introduced for ion migration as the rate‐limiting step. This model analyses the incubation time and analytically correlates it with the electric field, diffusion coefficient, and temperature, facilitating the determination of threshold voltage and diffusivity from high to low resistance states for ion migration as the rate‐limiting step. By exploring parallel plate cells with Yttria‐Stabilized Zirconia (YSZ) of nanometer thickness, the application of the model is illustrated and the fundamental equations are applied to outstanding memristive cells in the literature. The applicability of this model to cells of various charge carriers is proposed, ranging from vacancies and electron transport to oxygen ions and metal cations, denoting its potential importance.

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“…In previous studies using MIM configurations, it has been observed that the signals for reactions are more likely to appear in the low-voltage region but at a higher temperature. 20 Therefore, the measurements were performed within a voltage window of 6 V with a scan rate of 0.1 V/s and a delay time of 400 ms.…”

Section: ••mentioning

confidence: 99%

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Romo,

Soto,

Tiznado

2024

ACS Appl. Electron. Mater.

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This investigation explores the resistive switching and energy storage capabilities of 100 nm yttria-stabilized zirconia (YSZ) thin films in a metal-oxide-semiconductor (MOS) configuration. Under soft voltage and temperature conditions, the device primarily functions as a conventional MOS capacitor with excellent insulating properties. However, upon exceeding a voltage threshold of 10.5 V, the resistive switching mechanisms are triggered. The multilevel memory properties of the device were investigated by employing triangular-shaped voltage pulses. The results showed excellent control of the resistance states through the intensity of the applied voltage. Furthermore, state retention experiments revealed a transition from short-to long-term data storage properties, holding promising characteristics for the development of neuromorphic materials. To gain a deeper understanding of the internal mechanisms in YSZ thin films, a combination of chronoamperometric and impedance spectroscopy analyses were performed. Through these results, we found that the induction of resistive switching mechanisms correlates with an increase in permittivity. This characteristic distinguishes them from traditional devices, where the capacitive properties typically decrease after the switching process. Additionally, we investigate the influence of temperature on the energy storage functionality of the device. Remarkably, as the temperature rises from 25 to 60 °C, the electrical response of the films resembles that of a supercapacitor. Furthermore, electrode/electrolyte reactions occur at temperatures from 60 to 100 °C, resulting in a pseudocapacitive performance comparable to commercial batteries in terms of energy and power densities.

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The effect of temperature and bias on the energy storage of a Ru/YSZ/Ru thin-film device

Cited by 6 publications

References 34 publications

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

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