The effect of the recombination mechanisms location on the temperature sensitivity of thin-film photovoltaic cells

Abstract

Thin film solar cells temperature sensitivity and impact of the main recombination mechanism location are investigated in this paper. The main mechanisms in bulk and at the heterojunction interface are discriminated. Using a 1D simulation software, “Solar Cell Capacitance Simulator” (SCAPS), we observed a higher temperature coefficient of open circuit voltage (Voc) for cells with main recombination centers at the interface than the one with main recombination centers in volume. Furthermore, an LTSpice module model is used to visualize the effects of the recombination centers' location on the performance ratios of the modules. The results show more degradation for the ratios performance of cells with the main recombination mechanisms at the interface than those in volume.

Simulation Study of Perovskite Cell Performance in Real Conditions of Sub-Saharan Africa

“…This means that the perovskite-based solar cell shows only a small decrease in efficiency with high temperature and thus agrees with the finding of Tress et al in [10]. These results seem obvious when we know that perovskite is not very sensitive to temperatures above ambient [11] . P-V curve showing the effect of temperature We show here the effect of temperature on the voltage and also on the power.…”

Identifying dominant recombination locations in double‐graded Cu(In1‐xGax)(Se1‐ySy)2 solar cells and their impact on the performance at different light intensities

“…As a consequence, such a treatment is expected to reduce recombination rates at the buffer/absorber interface, in accordance with the observed smaller ER values, indicating a shift in the dominant recombination region toward the absorber's bulk. This suggests that when the dominant recombination location shifts away from buffer/absorber interface, improves, as previous studies suggest 4 . It is worth noting that the location of the dominant recombination region is not correlated with magnitude of the recombination, even for the closely related set of samples studied here.…”

“…This suggests that when the dominant recombination location shifts away from buffer/ absorber interface, β X,rel improves, as previous studies suggest. 4 It is worth noting that the location of the dominant recombination region is not correlated with magnitude of the recombination, even for the closely related set of samples studied here. For example, C and D present similar ER values but different β X,rel .…”

“…3 Kata et al described the impact of the dominant recombination location on the temperature sensitivity of the open-circuit voltage. 4 Furthermore, according to the analysis of Scheer et al, the activation energy (E A ) for each recombination region is defined as the band gap through which carriers recombine. 5 Therefore, it is worth investigating the recombination locations governing solar cells performance under different illuminations intensities and for graded solar cell absorbers.…”

“…In an extension of this method, Paul et al incorporated recombination processes at the absorber/back‐contact interface, but the same limitations were still present 3 . Kata et al described the impact of the dominant recombination location on the temperature sensitivity of the open‐circuit voltage 4 . Furthermore, according to the analysis of Scheer et al, the activation energy ( E A ) for each recombination region is defined as the band gap through which carriers recombine 5 .…”