The electron g factor in AlGaN/GaN quantum wells

Li, Ming; Feng, Zhi-B.-O.; Fan, Libo; Zhao, Yilong; Han, Hongpei; Feng, Tuanhui

doi:10.1016/j.jmmm.2015.11.081

Cited by 7 publications

(4 citation statements)

References 32 publications

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“…Owing to the importance of γ and the increasing interest in spintronics and new schemes for quantum computation [15], γ has recently been the subject of many experimental and theoretical studies [11,13,[16][17][18][19]. In the experimental studies, quantum beating spectroscopy, Kerr rotation, and electrically detected electron spin resonance (ESR) techniques were primarily used for the investigation of γ; the electrically detected ESR technique is particularly suitable for precise measurements in magnetic films [7,14].…”

Section: Introductionmentioning

confidence: 99%

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films

Zhang¹,

Fu²,

Wang³

et al. 2021

J. Phys. D: Appl. Phys.

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The gyromagnetic ratio γ is a key quantity that determines spin and magnetic properties. In this study, γ is investigated via the electric detection of ferromagnetic resonance and first-principles calculations for c-axis oriented hcp-Co1−x Ir x () soft magnetic films with easy-plane magnetocrystalline anisotropy. γ increases linearly from 19.13 GHz kOe−1 for pure Co film to 19.32 GHz kOe−1 at x= 0.23, which is in agreement with the calculated result. The calculations reveal that the primary reason for the variation of γ is the different trends in the spin and orbital magnetic moments of the neighboring Co atoms of Ir, especially the linear increase of the latter. An investigation into the electronic structure indicates that the increase in these orbital magnetic moments is due to the appearance of 3d unoccupied minority states moving towards the Fermi level, which is induced by the local lattice distortion centered at Ir. Our findings provide the important γ data for the applications of CoIr soft magnetic films in high-frequency electromagnetic and spintronic devices, and will provide guidance in the understanding of the dynamic magnetic properties in disordered binary magnetic alloys.

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Section: Introductionmentioning

confidence: 99%

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films

Zhang¹,

Fu²,

Wang³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Due to the increasing interest in spintronics [6] and in new schemes for quantum computation, including the detection of Majorana fermions [7], much attention has been given lately to the renormalization of the electron g factor in semiconductor nanostructures [8][9][10][11][12][13][14][15][16][17][18]. The mesoscopic confining potential in semiconductor nanostructures further renormalizes the bulk effective g factor (already renormalized from the bare value 2) and introduces extra anisotropies, transforming scalar g factors into tensors.…”

Section: Introductionmentioning

confidence: 99%

“…After the work of many groups [21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40], it is by now well established that the ground-state effective g factor for electrons confined in regular GaAs-like QWs (g QW ) varies with L w interpolating from the bulk barrier (AlGaAs) to the bulk well (GaAs) g factors, when L w goes from zero to a sufficiently large value; and that between these two bulk limits, g QW (L w ), depends on the magnetic-field orientation. The difference in the QW g factor between the magnetic-field orientations perpendicular and parallel to the interfaces gives the g-factor main anisotropy g QW (=g − g ⊥ ) which is the most direct and critical signature of the quantum confinement, and has been much investigated both theoretically [13,14,17,22,41] and experimentally [8,24,26,32,39]. QW structures made out of different compounds were investigated and it is known, for example, that except for very thin asymmetric wells [13], electrons in GaAs-like QWs have a positive anisotropy, i.e., g > g ⊥ , where g refers to an in-plane magnetic field configuration, while g ⊥ to a magnetic field along the growth direction (note, however, that the opposite definition of anisotropy is also used in the literature).…”

Section: Introductionmentioning

confidence: 99%

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

et al. 2018

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The physics of the renormalization of the effective electron g factor by the confining potential in semiconductor nanostructures is theoretically investigated. The effective g factor for electrons in structures with interacting nanolayers, or coupled quantum wells (QWs), is obtained with an analytical and yet accurate multiband envelopefunction solution, based on the linear 8 × 8 k • p Kane model for the bulk band structure. Both longitudinal and transverse applied magnetic fields are considered and the g-factor anisotropy (i.e., the difference between the two field configurations) is analyzed over the entire space spanned by the two structure parameters: the thickness of the active layers and the thickness of the tunneling barrier separating them. Two-dimensional anisotropy maps are constructed for symmetric and asymmetric InGaAs coupled QWs, with InP tunneling barriers, that reproduce exactly known single-layer or QW results, in different limits. The effects of the structure inversion asymmetry on the mesoscopic g-factor renormalization are also discussed, in particular the negative anisotropies for thin-layer structures. Such multilayer structures form an excellent testing ground for the theory, and the analytical solution presented, which is perfectly consistent over the whole space of parameters, leads to helpful expressions and can guide further research on the mechanisms of this mesoscopic renormalization.

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“…for both symmetric and asymmetric QWs) and was explicitly applied in biased GaAs and InGaAs triangular QWs [16]. However, the above perturbative solution is much simpler, gives an intuitive and useful physical interpretation for the g-factor renormalization, derives from long used and tested approximations in similar problems [17], more recently the g-factor solution has been applied also to PbTe QWs [7], GaN QWs [18] and GaAs nanodisks [3] and therefore it would be highly desirable to have such a solution for a general nanostructure. In particular, asymmetric quantum wells (AQWs), i.e.…”

Section: Introductionmentioning

confidence: 99%

Electrongfactor anisotropy in asymmetric III–V semiconductor quantum wells

Sandoval

Silva

et al. 2016

Semicond. Sci. Technol.

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The electron effective g factor tensor in asymmetric III-V semiconductor quantum wells (AQWs) and its tuning with the structure parameters and composition are investigated with envelope-function theory and the ´k p 8 8 • Kane model. The spin-dependent terms in the electron effective Hamiltonian in the presence of an external magnetic field are treated as a perturbation and the g factors * ĝ and *  g , for the magnetic field in the QW plane and along the growth direction, are obtained analytically as a function of the well width L. The effects of the structure inversion asymmetry (SIA) on the electron g factor are analyzed. For the g-factor main anisotropy * * D = -^ AQWs are presented and discussed with the available experimental data; in particular InAs QWs are shown to not only present much larger g factors but also a larger g-factor anisotropy, and with the opposite sign with respect to GaAs QWs.

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The electron g factor in AlGaN/GaN quantum wells

Cited by 7 publications

References 32 publications

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

Electrongfactor anisotropy in asymmetric III–V semiconductor quantum wells

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The electron g factor in AlGaN/GaN quantum wells

Cited by 7 publications

References 32 publications

Gyromagnetic ratio of oriented hcp Co1−x Ir x soft magnetic films

Gyromagnetic ratio of oriented hcp Co1−x Ir x soft magnetic films

Mesoscopic g-factor renormalization for electrons in III-V interacting nanolayers

Electrongfactor anisotropy in asymmetric III–V semiconductor quantum wells

Contact Info

Product

Resources

About

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films

Gyromagnetic ratio of oriented hcp Co_1−xIr _x soft magnetic films