2017
DOI: 10.1088/1361-6463/aa67bf
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The electronic band structure of Ge1−xSnxin the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect

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Cited by 97 publications
(121 citation statements)
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“…The room-temperature electron mobility increases from 140 cm 2 /Vs in GeSnP1 to 175 cm 2 /Vs in GeSnP3. Since the Sn concentration is the same in all samples, the enhancement of the carrier mobility and the change of the band gap can be associated with the strain engineering and the band gap renormalization, respectively [46,47]. Figure 6b shows the values for the direct band gap  in bulk Ge, tensile stained Ge-on-Si, undoped GeSn and very heavily doped GeSn alloys.…”
Section: Experimental Datamentioning
confidence: 99%
“…The room-temperature electron mobility increases from 140 cm 2 /Vs in GeSnP1 to 175 cm 2 /Vs in GeSnP3. Since the Sn concentration is the same in all samples, the enhancement of the carrier mobility and the change of the band gap can be associated with the strain engineering and the band gap renormalization, respectively [46,47]. Figure 6b shows the values for the direct band gap  in bulk Ge, tensile stained Ge-on-Si, undoped GeSn and very heavily doped GeSn alloys.…”
Section: Experimental Datamentioning
confidence: 99%
“…GeSn alloys can indeed have a direct bandgap under certain conditions of strain and Sn content. Generally, the required Sn contents are far above the Sn solubility in Ge, which is less than 1% . Lasing in GeSn layers has been observed at cryogenic temperature by several research teams It has also been shown that applying tensile strain to GeSn increases the energy splitting between the direct bandgap (Γ valley) and the indirect bandgap (L valley), while simultaneously shifting light emission to longer wavelengths …”
Section: Introductionmentioning
confidence: 99%
“…To calculate band structures of semiconductors, significant number of methods have been developed, such as the pseudopotential, density functional theory (DFT), tight binding, and k·p methods. One advantage of the k·p method is its relative ease of implementation on conventional computers, as it does not require heavy calculation resources.…”
Section: Introductionmentioning
confidence: 99%
“…The decrease in crystallite size with increase in La 3+ content maybe the possible reason for increase in band gap with increase in La 3+ content. Also, incorporation of La 3+ at the Ba 2+ site increases the density of change carriers, therefore, at room temperature itself many lower energy states in the conduction band may be filled, and subsequently band gap may widen as per the Burstein‐Moss effect . The bottom left inset (II) of Figure shows the room temperature photoluminescence spectra of pristine and La 3+ (2, 4, and 6 at.%) containing barium stannate nanoparticles recorded at an excitation wavelength of 290 nm.…”
Section: Resultsmentioning
confidence: 99%