The epitaxial lateral overgrowth of silicon by two-step liquid phase epitaxy

Influence of LPE process technological conditions on Si ELO layers morphology

“…3-4 lm). The data presented above are in good agreement with our previous results [4][5][6]. What is interesting, the layers grown in an H 2 atmosphere inherit more defects from the growth substrate than these grown under Ar (5.26 Â 10 5 and 3.45 Â 10 5 cm À2 , respectively).…”

“…The choice of mask kinds and silicon windows orientation was based on our previous experiments [13]. As was observed, in the case of h0 11i windows orientation, the lateral crystallization front was aligned to the seeding lines, while in the case of the h2 1 1i orientation of seeding lines the crystallization did not occur in a plane-parallel manner with respect to the direction mentioned, but the layers achieved a higher aspect ratio in the same conditions of growth [13,16,17].…”

“…One of the alternative technologies allowing the cell costs production to be reduced is thin film solar cells production where the costs are lowered directly by a reduction in the material consumption. The solution in this case can be epitaxial deposition of thin films and -in particular -epitaxial lateral overgrowth (ELO) which leads to thin layers with a better quality than the quality of substrates used [3][4][5][6]. Liquid phase epitaxy (LPE) has many advantages compared to other methods.…”

Analysis of ambient gas influence on silicon layers crystallized by means of LPE

“…1(a)) in comparison to the results of growth in an H 2 atmosphere ( Fig. 1(b)) [4]. It is very common that silicon LPE growth occurs from Sn-Si solutions, therefore, such system has been investigated in this work.…”

A roadmap to a technological platform for integrating nanophotonic structures with micromechanical systems in silicon-on-insulator

“…SCS cannot be grown directly on a sacrificial layer due to lattice constant mismatch. However, if contacts to underlying SCS layer (or deeper to the substrate) are etched a well-controlled SCS layer can grow starting from the contact spot in the Epitaxial Lateral Overgrowth (ELO) process 34 . The new layer preserves the same crystallographic characteristics as the parent layer.…”