The Hartman effect in monolayer graphene with Rashba spin–orbit interaction

Hasanirokh, Kobra; Mohammadpour, Hakimeh; Esmaelpour, Mohammad; Phirouznia, A.

doi:10.1016/j.physe.2015.05.023

Cited by 9 publications

(3 citation statements)

References 17 publications

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“…Influence of Rashba spin-orbit interaction in graphene sheet has attracted great attention in recent years [15][16][17][18][19] The Rashba interaction is appeared as a result of structure inversion-asymmetry which results in spin-splitting of band energies without gap opening. Therefore, the Rashba coupling cannot generate spin current in the presence of external bias voltage.…”

Section: Introductionmentioning

confidence: 99%

Quantum interference effects in graphene based side-coupled quantum ring: A non-equilibrium Green's function approach

Seyfizadeh

Phirouznia

2023

Preprint

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The present study investigates the I-V and spin-transport characteristics of a side-coupled graphene nano-ring. Where, non-equilibrium Green's function approach has been employed as computational framework. Meanwhile the effect of substrate induced Rashba interaction has been considered as a source of spin-dependent processes in the transport phenomena. Calculations have been performed within the coherent regime in which the electric and spin currents of the system are given as a function of bias voltage and Rashba coupling strength. Results show that Aharonov-Bohm oscillations and Fano factor could be changed by the Rashba coupling strength. The Rashba interaction can change the Fano factor from the Poisson to sub-Poisson regime in the case of armchair leads.

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Section: Introductionmentioning

confidence: 99%

Quantum interference effects in graphene based side-coupled quantum ring: A non-equilibrium Green's function approach

Seyfizadeh

Phirouznia

2023

Preprint

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“…The dwell time, t , d represents the time a particle spends in the barrier region, regardless of whether it is ultimately reflected or transmitted [35]. Recently, many studies were carried out on the group delay time and the dwell time in different structures [35][36][37][38][39][40][41][42][43][44][45][46][47][48]. Zhai and Lu theoretically studied the relation between the dwell and the group delay time for helical electrons in the topological insulator barrier [40].…”

Section: Introductionmentioning

confidence: 99%

Tunneling time and transmission properties in strained graphene with a time-oscillating potential

Sattari

Mirershadi

2020

Phys. Scr.

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We investigate the transport properties, the group delay time and the Hartman effect through the graphene electrostatic barrier with a time-dependent oscillating potential, under zigzag and armchair strains. In this work, we demonstrated that as the armchair-direction strain is applied, the transmission has a gap for the sidebands, as well as the central band. The transmission gap strongly depends on strain strength and barrier height. We found that the transmission probability can be controlled by adjusting the amplitude of the time-oscillating potential. The transmission probability for the nonzero angle of incidence, unlike the zero angles of incidence, depends on the sign of n for the nth sideband. Also, the group delay time is sensitive to the order of the sidebands. The barrier width is very important parameter in controlling the group delay time of various sidebands. Remarkably, the Hartman effect, for the armchair strain, in contrast to the zigzag direction strain, can be observed at the zero angles of incidence, for both the sidebands and the central band.

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“…It was found that the Hartman effect disappears at normal incidence for graphene systems with either symmetrical [3] or asymmetrical potential barriers [36]. The dwell time and transmission probability are sensitive to the presence of magnetic modulation [37] and Rashba spin-orbit interaction [38] in the barrier segment. In bilayer graphene, the Hartman effect occurs only when the transmission channels consist of pure evanescent waves [39].…”

Section: Introductionmentioning

confidence: 99%

Group delay time and Hartman effect in strained Weyl semimetals

Xu¹,

Siu²,

Chen³

et al. 2019

J. Phys.: Condens. Matter

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The group delay time was theoretically studied in Weyl semimetals (WSMs) in the presence of strain. The Hartman effect, where the delay time for tunneling through a barrier tends to a constant for large barrier thickness, can be observed in WSMs when the incident angles γ and φ, and the unidirectional strain tensor u 33 and shear strain tensor u 32 , are larger than some critical values. We show that the Hartman effect is strongly dependent on the strength of the unidirectional strain tensor u 33 and the ratio of the shear strain tensor u 32 /u 31 . We also found that tensile and compressive strains have different effects on the group delay time and the transmission probability T in WSMs. Our study shows the possibility of modulating the group delay time and the Hartman effect in strained WSMs.

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The Hartman effect in monolayer graphene with Rashba spin–orbit interaction

Cited by 9 publications

References 17 publications

Quantum interference effects in graphene based side-coupled quantum ring: A non-equilibrium Green's function approach

Quantum interference effects in graphene based side-coupled quantum ring: A non-equilibrium Green's function approach

Tunneling time and transmission properties in strained graphene with a time-oscillating potential

Group delay time and Hartman effect in strained Weyl semimetals

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