The HgCdTe Electron Avalanche Photodiode

Beck, Jeffrey; Wan, C. F.; Kinch, M. A.; Robinson, James E.; Mitra, P.; Scritchfield, Richard; Campbell, Joe C.

doi:10.1109/leosst.2006.1694056

Cited by 23 publications

(36 citation statements)

References 4 publications

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“…Johan Rothman (1) , Eric de Broniol (1) , Kevin Foubert (1) , Laurent Mollard (1) , Nicolas Péré-Laperne (2) , Frederic Salvetti (2) , Alexandre Kerlain (2) , Yann Reibel (2) CEA/Leti, Minatec Campus, 17 rue des Martyrs, 38054 Grenoble Cedex, France : johan.rothman@cea.fr , (2) …”

Section: Hgcdte Apds For Space Applicationsunclassified

“…These characteristics are complemented by a high gain homogeneity which makes HgCdTe APDs suitable for imagery application. Consequently, high performance focal plane arrays have been developed for active [2,6,7,[13][14][15][16][17] and passive imaging [14,18]. Four HgCdTe APD FPAs have been developed at CEA/Leti and Sofradir so far [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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HgCdTe APDS for space applications

Rothman

Broniol

Foubert

et al. 2017

International Conference on Space Optics — ICSO 2014

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Section: Hgcdte Apds For Space Applicationsunclassified

Section: Introductionmentioning

confidence: 99%

HgCdTe APDS for space applications

Rothman

Broniol

Foubert

et al. 2017

International Conference on Space Optics — ICSO 2014

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“…The variation of the gain as a function of band-gap was quantified using Becks phenomenological formula [2]:…”

Section: Pos(qq09)009mentioning

confidence: 99%

“…Several groups [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] have reported exponentially increasing multiplication gains of 100-1000 for low values of reverse diode bias (5-10 V on the n-type contact), associated with a nearly conserved signal to noise ratio SNR with an excess noise factor F=SNR in /SNR out close to unity. This behaviour contrasts with the one observed in III-V material or Si APDs, which requires high reverse bias and have typical noise factors of F III-V~4 -5 and F Si~2 -3, respectively [19].…”

Section: Introductionmentioning

confidence: 99%

“…Since the first demonstrations of the exponential gain and ultra low excess noise factor by Beck et al at DRS [1][2][3][4], the high potential of HgCdTe e-APDs have been confirmed by several groups [6][7][8][9][10][11][12][13][14][15][16][17][18], and first results on dedicated e-APD FPAs were published recently. Baker et al at Selex were the first to demonstrate laser gated imaging in a 320x256 24 µm pitch APD FPA [10].…”

Section: Introductionmentioning

confidence: 99%

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HgCdTe APD- Focal Plane Array development at DEFIR for low flux and photon-counting applications.

Rothman¹

2010

Proceedings of Quantum of Quasars Workshop — PoS(QQ09)

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Infrared avalanche photodiodes from bulk to 2D materials

Martyniuk,

Wang,

Rogalski

et al. 2023

Light Sci Appl

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Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned—“third wave” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

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The HgCdTe Electron Avalanche Photodiode

Cited by 23 publications

References 4 publications

HgCdTe APDS for space applications

HgCdTe APDS for space applications

HgCdTe APD- Focal Plane Array development at DEFIR for low flux and photon-counting applications.

Infrared avalanche photodiodes from bulk to 2D materials

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