The identification of In2O in the gas phase by high resolution electronic spectroscopy

Lakin, Nicholas M.; Hoek, Ger van den; Beattie, I. R.; Brown, John M.

doi:10.1063/1.474786

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…Although the In(I) oxide In 2 O is not known as a bulk solid phase, In 2 O has been characterised in the gas phase. 32 A limited number of solid oxide phases containing In(I) are also known, including the tungsten bronze In x WO 3 33 and In(I)-β"-alumina. 34 In 2 O has also been deposited onto InAs(001) surfaces, where it was characterised by STM.…”

Section: Resultsmentioning

confidence: 99%

“…However, due to pronounced covalency, these different charge states are better represented as In(I) and In(III). Although the In(I) oxide In 2 O is not known as a bulk solid phase, In 2 O has been characterized in the gas phase . A limited number of solid oxide phases containing In(I) are also known, including the tungsten bronze In x WO 3 and In(I)-β″-alumina .…”

Section: Resultsmentioning

confidence: 99%

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Identification of Lone-Pair Surface States on Indium Oxide

et al. 2018

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Indium oxide is widely used as a transparent electrode in optoelectronic devices and as a photocatalyst with activity for the reduction of CO 2 . However, very little is known 1 about its surface structure. In this report, directional lone-pair surface states due to filled 5s 2 orbitals have been identified on In 2 O 3 (111) through a combination of hard and soft X-ray photoemission spectroscopy and density functional theory calculations.The lone pairs reside on indium ad-atoms in a formal +1 oxidation state, each of which traps two electrons into a localised hybrid orbital protruding away from the surface and lying just above the valence band maximum in photoemission spectra. The third electron associated with the ad-atoms is delocalised into the conduction band, thus producing the surface electron accumulation layer identified previously on vacuumannealed In 2 O 3 (111) (1×1) surfaces. The surface structure is further supported by low-energy electron diffraction. The 5s 2 lone pairs confer Lewis basicity on the surface In sites, and may have a pronounced impact for the (photo-)catalytic activity of reduced In 2 O 3 .

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Identification of Lone-Pair Surface States on Indium Oxide

et al. 2018

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“…Briefly, in CVD chamber atmosphere, the gaseous indiumcontaining species react with Se, rendering 2D In2Se3 continuous films. [34] The timedependent optical images of β-In2Se3 films at 5, 20, and 30 min, and the corresponding schematic diagrams demonstrate the three growth stages: (i) nucleation of small 2D β-In2Se3 crystals; (ii) growing up and merging; (iii) completely stitching and formation of continuous 2D β-In2Se3 films (Fig. 1d).…”

Section: Introductionmentioning

confidence: 89%

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

et al. 2022

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Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing, which may surpass the prevailing Von Neumann architecture. To date several 2D FE materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (PE) (β), ferroelectric (FE) (α) and antiferroelectric (AFE) (β′) phases can be attained in the 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 film with desired phase is still in absence, and the stability conditions for each phase remain obscure.Here, we show the successful growth of centimetre (cm)-scale 2D β-In2Se3 film by chemical vapor deposition (CVD). We also obtain distinct cm-scale 2D β′-In2Se3 film by InSe precursor addition during CVD. More importantly, we demonstrate that asgrown 2D β′-In2Se3 film on mica substrates can be delaminated or transferred onto flexible or uneven substrates which simultaneously yields cm-scale 2D α-In2Se3 film through complete phase transition. Thus, a full spectrum of PE, FE and AFE 2D films are readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility (29 and 53 cm 2 V -1 s -1 in reverse sweep for β′-and α-In2Se3, respectively), and polarizable β′-α In2Se3 hetero-phase junctions with improved non-volatile memory performance. Our work pioneers in tailoring the 2D FE structures by precise phase engineering, and unlocks their great potentials for logic-in-memory electronics.

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New Light on the Chemistry of the Group 13 Metals

Downs¹,

Himmel²

2011

The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities

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The identification of In2O in the gas phase by high resolution electronic spectroscopy

Cited by 7 publications

References 5 publications

Identification of Lone-Pair Surface States on Indium Oxide

Identification of Lone-Pair Surface States on Indium Oxide

Phase-controllable large-area two-dimensional In2Se3 and ferroelectric heterophase junction

New Light on the Chemistry of the Group 13 Metals

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