The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

Massabuau, Fabien; Tartan, Chloe C.; Traynier, R.; Blenkhorn, W. E.; Kappers, Menno J.; Dawson, P.; Humphreys, C. J.; Oliver, Rachel A.

doi:10.1016/j.jcrysgro.2013.10.004

Cited by 9 publications

(14 citation statements)

References 28 publications

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“…To investigate a range of interface roughnesses, we investigated three samples grown by 2T method, with substrate miscut of 0°, 0.25°, and 0.5° (

\pm 0 . 1^{\circ}

) toward

false(11 \overset{2}{true} 0 false)

. (The actual values of the misorientation were found by X‐ray diffraction to be very close to the nominal values given by the manufacturer ().) We will refer to these samples as 2T 0°, 2T 0.25°, and 2T 0.5°, respectively.…”

Section: Experimental Methodsmentioning

confidence: 76%

“…The roughness induced by the 2T method is predominantly due to the presence of GWWFs, which are used here as interface roughening mechanism. In a previous study, we reported that the size and spacing of the GWWFs can be controlled to some extent by changing the misorientation of the sapphire substrate (). To investigate a range of interface roughnesses, we investigated three samples grown by 2T method, with substrate miscut of 0°, 0.25°, and 0.5° (

\pm 0 . 1^{\circ}

) toward

false(11 \overset{2}{true} 0 false)

.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…To simulate the growth by 2T, following the growth of the InGaN layer on three misoriented substrates similar to the QW samples, the temperature was ramped‐up to 860 °C for 90 s before cooling down the sample as quickly as possible. This last method has been employed in the past and was found to give a reliable insight into the formation of GWWFs by the 2T method ().…”

Section: Experimental Methodsmentioning

confidence: 99%

“…It is therefore important to be able to characterize the QW interface. However until now, this was done using transmission electron microscopy (TEM) or atom probe tomography (APT) . However these methods are time‐consuming, destructive, and can be experimentally challenging when beam damage of the QWs is taken into consideration.…”

Section: Introductionmentioning

confidence: 99%

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X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface

Massabuau

Piot

Frentrup

et al. 2017

Physica Status Solidi (b)

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A method to characterize the interface of InGaN/GaN quantum wells by X‐ray reflectivity is presented. The interface roughness can be obtained from the ratio of diffuse to specular scatterings obtained on a transverse ω‐scan. Rotation around the azimuthal φ angle allows for information about the directionality of the roughening mechanisms to be obtained. The method allows for quick identification of the presence or absence of gross well width fluctuations in the quantum well, providing that the interface is chemically sharp. When the interface exhibits chemical grading, compositional fluctuations across the terraced structure of the quantum well surface lead to aggravated roughness as the barrier is grown, which may be misinterpreted as gross well width fluctuations. This method carries promises for complementing analysis by transmission electron microscopy as it is non‐destructive, fast, and allows multi‐directional characterization of the roughness. It would therefore be particularly useful to detect process deviation in a production line, where prior knowledge of the sample is already available.

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“…To investigate a range of interface roughnesses, we investigated three samples grown by 2T method, with substrate miscut of 0°, 0.25°, and 0.5° (

\pm 0 . 1^{\circ}

) toward

false(11 \overset{2}{true} 0 false)

Section: Experimental Methodsmentioning

confidence: 76%

\pm 0 . 1^{\circ}

) toward

false(11 \overset{2}{true} 0 false)

.…”

Section: Experimental Methodsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface

Massabuau

Piot

Frentrup

et al. 2017

Physica Status Solidi (b)

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show abstract

“…The reason underlying this behavior, impeding carrier diffusion to dislocations with subsequent non-radiative recombination, supports the role of the fQWs in these lowthreshold nanobeam lasers. 24,25 In contrast, the best coupling between microdisk cavity and active layer for the multiple maxima distributed along the periphery of the microdisk is achieved for a gain medium that is as uniform as possible. 26 Carriers generated through the entire interior of the disk may diffuse to the periphery, recombine radiatively and interact with the whispering gallery modes.…”

mentioning

confidence: 99%

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Niu

Woolf

Wang

et al. 2015

Applied Physics Letters

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We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

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Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Massabuau

Kappers

Humphreys

et al. 2017

Physica Status Solidi (b)

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Here, we study the mechanisms underlying a method used to limit the formation of trench defects in InGaN/GaN quantum well structures by using H2 in the carrier gas for the growth of GaN barriers. The method leads to a complete removal of the trench defects by preventing the formation of basal‐plane stacking faults from which trench defects originate, as well as preventing the formation of stacking mismatch boundaries. The penalty paid for the absence of trench defects is the formation of InGaN wells with gross well‐width fluctuations where the H2 gas has etched away the indium locally. Where a fully formed trench defect (stacking mismatch boundary opened as V‐shaped ditch) already exists in the structure, the GaN barrier growth method using H2 results in a strongly disturbed structure of the quantum well stack in the enclosed region, with the quantum wells and barriers being in places significantly thinner than their counterparts in the surrounding material.

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The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

Cited by 9 publications

References 28 publications

X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface

X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

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