The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET

Manikandan, S.; Balamurugan, N. B.

doi:10.1007/s10825-020-01472-y

Cited by 21 publications

(15 citation statements)

References 28 publications

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“…Finally, to evaluate the significance of a VSTB FET, it is necessary to compare its performance to that of other non‐classical devices. In this regard, the overall performance estimated in this work is compared with the reported results of few published articles in Table 3 17,18,48–56 . It is noticed that a VSTB FET yields a comparable performance as any other modern device; however, the structural complexity is minimal in the case of this new structure.…”

Section: Resultsmentioning

confidence: 86%

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

Barman

Baishya

2021

Int J RF Microw Comput Aided Eng

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This article reports the DC and analog/radio frequency (RF) response of a newly invented device called vertical super‐thin body (VSTB) FET towards high‐k (Si3N4/HfO2) and low‐k (SiO2) gate dielectrics in conjunction with the scaling effect through a well‐calibrated Sentaurus TCAD tool. At channel length (LG) of 20 nm, compared to SiO2, Si3N4 improves various DC parameters such as off‐state leakage current (Ioff), on‐current (Ion), on‐to‐off current ratio (Ion/Ioff ratio), subthreshold swing (SS), and drain‐induced‐barrier‐lowering (DIBL) by 77.15%, 26.2%, one order of magnitude, 15.78%, and 36.2%, respectively. On the other hand, a higher improvement is seen in all these DC parameters for the HfO2 gate dielectric (Ioff, Ion, Ion/Ioff ratio, SS, DIBL improves respectively by 91.8%, 41.57%, two orders of magnitude, 28.28%, and 62.71%). The underlying physics behind such excellent improvement is explained by the device off‐state energy band diagram, electrostatic potential, and channel electron density profile for each dielectric. Further, for all the gate dielectrics considered, the device characteristics were studied for a wide range of LG from 10 to 50 nm to reveal the scaling impact on the device performance. Irrespective of the gate dielectric material, the device exhibits excellent performance at LG = 10 nm, which in turn indicates to the brilliant scalability of this new device. Besides, although Si3N4 and HfO2 increase gate capacitance (Cgg)/gate‐drain capacitance (Cgd), due to the extremely low values of Cgg/Cgd, enhanced unit gain cut‐off frequency, and gain‐bandwidth‐product is achieved. In addition, the increased transconductance (gm) of the device applying Si3N4/HfO2 gate dielectric leads to a higher peak value of TGF, intrinsic gain, TFP, GFP, and GTFP. This study intends to expand the fundamental knowledge about such a new device as a VSTB FET and hence, aims to be utilized in the future research of this novel device.

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Section: Resultsmentioning

confidence: 86%

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

Barman

Baishya

2021

Int J RF Microw Comput Aided Eng

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“…Transconductance generation factor (TGF) of a device relates drain current to an ac parameter (transconductance) as shown in equation 38,39 -…”

Section: Resultsmentioning

confidence: 99%

“…To ameliorate the undesirable effects of distortion and ensure more linear behaviour, all of these quantities should have high values bar IMD3. 40,41 The formulae for the aforementioned metrics can be found in 39,40,[42][43][44][45]…”

Section: Resultsmentioning

confidence: 99%

Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET

Hussain

Mustakim

Saha

2021

Journal of Elec Materi

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In this research work, we have varied several parameters of a carbon nanotube based tunneling field effect transistor (CNT-TFET) such as the dielectric constant of the gate insulator (j), channel length, oxide thickness, doping level, and the nature of doping to investigate how the performance of the CNT-TFET is affected. The performance analysis has been done based on the following performance criteria: Subthreshold swing (SS), threshold voltage (V T), and on-current to off-current ratio (I on /I off). In addition, we have also analyzed how linearity and distortion figures of merit such as second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), third-order input intercept point (IIP3), and third-order intermodulation distortion (IMD3) are affected by parametric variation. By observing the impact of parametric variation on this large number of performance metrics, a compromise choice of structural parameters is possible depending on the application. Moreover, we have proposed an asymmetric doping design that suppresses the highly undesirable ambipolar behavior in CNT-TFET. In a real-space approach, the simulation study has been carried out using the elegant non-equilibrium Green's function (NEGF) formalism considering tight-binding Hamiltonian.

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“…For operations at higher frequencies, the transconductance (g 𝑚 ) plays a dynamic part as it implies the exaggeration capability of the FinFET. It is mathematically denoted as [35], ------------------------------------------------------------------------------------(1)…”

Section: Analog Performancesmentioning

confidence: 99%

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

Tripathy

Pk³

2021

Preprint

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In this paper, the influence of oxide (SiO2) layer thickness on the different figure of merits of a FinFET is analysed by varying the oxide layer thickness which is present between the gate and the Fin. Here, the overall thickness of the FinFET is taken to be 30nm, and the oxide (SiO2) layer thickness is changed from 0.8 nm to 3nm, and the analog, radio frequency parameters are determined for different structures. The performance parameters like drain current (ID), transconductance generation factor (TGF), transconductance (gm), output conductance (gds), parasitic capacitances like Cgs, Cgd, Cgg, cut-off frequency (fT), gain bandwidth product (GBW) and maximum frequency of oscillation (fmax) are calculated to learn the influence of variation in the FinFET oxide (SiO2) layer thickness. It is detected from the result and analysis that the drain current, output conductance, transconductance generation factor, transconductance and gain bandwidth product improve with decrement in oxide layer thickness. But as a tradeoff, the internal capacitances like Cgs, Cgd, Cgg, maximum frequency of oscillation and cut-off frequency degrade when there is a reduction in oxide (SiO2) layer thickness.

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The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET

Cited by 21 publications

References 28 publications

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

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