The Influence of Ideality Factor on Fill Factor and Efficiency of Solar Cells

Vasić, A.; Stojanovic, M.; Osmokrović, P.; Stojanović, Nebojša

doi:10.4028/www.scientific.net/msf.352.241

Cited by 13 publications

(6 citation statements)

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“…3 efficiencies. In fact, as the diode ideality factor increases (from the ideal value of n = 1), the voltage at the maximum power point decreases, and therefore the efficiency of the device [36]. As the VOC value of our cells is 614 mV, the efficiency of the cell will be determined by the dominant transport mechanism at these voltage range, that is the one with n1 = 1.20.…”

Section: Resultsmentioning

confidence: 93%

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

García-Hernansanz

García-Hemme

Montero

et al. 2018

Solar Energy Materials and Solar Cells

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Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong band bending in the Si substrate. This bending pushes the surface into inversion. In addition, the substoichiometry of the evaporated MoOx layers leads to a high density of states within the bandgap. This is crucial for charge transport. The J-V electrical characteristics at several temperatures were analysed to elucidate the dominant charge transport mechanisms of this heterojunction structure. We have identified two different transport mechanisms. At low bias voltage, transport is dominated by hole tunneling through the MoOx gap states. At higher voltage the behavior is similar to a Schottky junction with a high barrier value, due to the high MoOx work function. These results provide a better understanding of the hole selective

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Section: Resultsmentioning

confidence: 93%

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

García-Hernansanz

García-Hemme

Montero

et al. 2018

Solar Energy Materials and Solar Cells

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“…increase in the ideality factor has a direct and negative effect on the fill factor of solar cells [74]. For structures 1 and 2, the FF increment indicates a low ideality factor and a reduction in reverse saturation current above a defect density of 10 14 cm −3 .…”

Section: Effect Of Interfacial Defect Density Etl/ Ch3nh3sni3 (Il1) and Ch3nh3sni3/cuo (Il2)mentioning

confidence: 98%

“…The ideality factor (n), which is linked to the nature of the semiconductor, influences carrier generation, its transportation at the interface and collection at the terminal contact. An increase in the ideality factor has a direct and negative effect on the fill factor of solar cells [74]. For structures 1 and 2, the FF increment indicates a low ideality factor and a reduction in reverse saturation current above a defect density of 10 14 cm −3 .…”

Section: Effect Of Interfacial Defect Density Etl/ Ch3nh3sni3 (Il1) and Ch3nh3sni3/cuo (Il2)mentioning

confidence: 99%

Design and Modelling of Eco-Friendly CH3NH3SnI3-Based Perovskite Solar Cells with Suitable Transport Layers

et al. 2021

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An ideal n-i-p perovskite solar cell employing a Pb free CH3NH3SnI3 absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH3NH3SnI3 absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in Voc, PCE decreases with temperature. Defect tolerance limit for IL1 is 1013 cm−3, 1016 cm−3 and 1012 cm−3 for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 1014 cm−3. With the proposed device structure FTO/PCBM/CH3NH3SnI3/CuO shows the maximum efficiency of 25.45% (Voc = 0.97 V, Jsc = 35.19 mA/cm2, FF = 74.38%), for the structure FTO/TiO2/CH3NH3SnI3/CuO the best PCE is obtained 26.92% (Voc = 0.99 V, Jsc = 36.81 mA/cm2, FF = 73.80%) and device structure of FTO/WO3/CH3NH3SnI3/CuO gives the maximum efficiency 24.57% (Voc = 0.90 V, Jsc = 36.73 mA/cm2, FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO2/CH3NH3SnI3/CuO system provides better performance and better defect tolerance capacity.

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“…Ageing tends to increase the value of R s [34], and decrease the value of I sc [34] and form factor [34], thereby increasing the value of diode ideality factor [35, 36]. Variations in these parameters, although small [34], tend to make the exponential term smaller, and the overall value of expression (12) closer to unity.…”

Section: Mathematical Formulation and Pv Panel Modelmentioning

confidence: 99%

Generalised model of a photovoltaic panel

Rahman

Varma

Vanderheide

2014

IET Renewable Power Generation

143

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The modelling of photovoltaic (PV) solar panels requires electrical parameters which are dependent on the manufacturing materials and their physical properties. Manufacturers typically do not disclose detailed physical properties of the PV module, except for some electrical quantities such as open circuit voltage (V oc), short-circuit current (I sc), maximum power point voltage (V m), maximum power point current (I m) and maximum power (P M). However, to model the PV panels comprehensively, it is necessary to determine other physical parameters, e.g., series resistance of PV cell (R s), shunt resistance of PV cell (R Sh) and diode ideality factor (n). This paper presents a generalised mathematical model of a PV panel utilising only the quantities provided in manufacturer's datasheet. The proposed modelling technique determines all the PV panel parameters without any explicit repetitive iteration. Although the developed model is general and can be implemented on any software platform, its implementation is demonstrated on a commercial electromagnetic transients simulation software electro magnetic transient including direct current power systems computer aided design. The electrical parameters obtained from the proposed PV panel model are validated for six different commercially available PV panels from their datasheet values and also from measurements provided by National Institute of Standards and Technology for solar irradiation and temperature at nonstandard test conditions.

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The Influence of Ideality Factor on Fill Factor and Efficiency of Solar Cells

Cited by 13 publications

References 0 publications

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Design and Modelling of Eco-Friendly CH3NH3SnI3-Based Perovskite Solar Cells with Suitable Transport Layers

Generalised model of a photovoltaic panel

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