The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering

Evtushenko, A I; Bykov, О.І.; Klochkov, L. O.; Lytvyn, O. S.; Ткач, В. М.; Kutsay, O.; Staryk, S. P.; Baturyn, V.A.; Karpenko, O. Yu.; Dusheyko, M.; Lashkarev, G. V.

doi:10.15330/pcss.16.4.667-674

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2021

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“…Thus, in this case the lack of oxygen at ZnO film deposition is required also for Al electroactivity improving. The confirmation of this conclusion is the publication [13] where increasing of electrical conductivity for ZnO:Al films was observed at diminishing partial oxygen pressure in working chamber at magnetron technology of film deposition.…”

Section: Discussionmentioning

confidence: 63%

The study of the behavior of Al impurity in ZnO lattice by a fullerene like model

Ovsiannikova

Lashkarev

Kartuzov

et al. 2021

Phys. Chem. Solid St.

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The fullerene like Zn32Al4O36 clusters were investigated and the oxygen interstitial Oi acceptor intrinsic defect formation energy as well as Al ionization energy were calculated. The effect of lattice packing defects on the electroactivity of Al impurity was investigated. Analysis of the defects formation energies shows the smaller formation energy of interstitial Oi in a comparison with a formation of Zn vacancy. This allows us to formulate recommendations of technological conditions for films deposition, with improved electroactivity of Al donor.

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Section: Discussionmentioning

confidence: 63%