Advances in Ferroelectrics 2012
DOI: 10.5772/52203
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The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films

Kai-Huang Chen1,
Chien-Min Cheng2,
Sean Wu3
et al.
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