The Kinetics of the Low‐Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane

Abstract

The kinetics of the deposition of polycrystalline silicon from silane were studied at 25-125 Pa and 863-963 K using a continuous flow perfectly mixed reactor equipped with a microbalance and a quadrupole mass spectrometer for in situ deposition rate measurements and on-line gas-phase analysis. It was possible to obtain rate coefficients that are intrinsic, i.e., only determined by chemical phenomena. A four-step elementary gas-phase reaction network coupled to a tenstep elementary surface network was able to describe the experimental data. Pressure falloff behavior of gas-phase reactions was taken into account using the Rice-Ramsberger-Kassel-Marcus theory. In the surface reaction mechanism, adsorption of silane, hydrogen, and highly reactive gas-phase intermediates and first-order desorption of hydrogen are the only kinetically significant steps. Silylene and disilane are the most abundant gas-phase intermediates, causing typically one fifth of the overall silicon growth.

Silane Pyrolysis to Silicon Rod in a Bell-Jar Reactor at High Temperature and Pressure: Modeling and Simulation

“…There are various kinetic models in the literature for the heterogeneous reaction rate, e.g., Weerts et al , investigated the kinetics of the deposition of polysilicon from silane at 25–125 Pa and 863–963 K, and a four-step elementary gas phase reaction network coupled to a ten-step elementary surface network was developed to describe the experimental data, however, the operating condition differed greatly from the present study, so this type of kinetic models was not involved here. Hashimoto et al used a single-rod reactor with a double tube to measure the heterogeneous CVD rate of silane diluted in hydrogen and helium in the temperature range 973–1173 K. A rate formula was determined assuming a chemical reaction mechanism on the growing surface by taking account of the reaction of hydrogen gas with adsorbed species, while the inhibition effect of silane was neglected due to the small concentration of silane considered. Iya et al obtained the heterogeneous kinetic model using a fixed bed reactor.…”

Multifluid Eulerian modelling of a silicon Fluidized Bed Chemical Vapor Deposition process: Analysis of various kinetic models

“…Detailed models considering several elementary steps exist in the literature to describe the deposition mechanisms of silane and disilane [38,47,55], but implementing these steps in a multifluid Eulerian model such as MFIX would be difficult. This is also the case for the detailed models describing the formation of fine particles by nucleation [39][40][41].…”

Computational Fluid Dynamic Design of Jet Stirred Reactors for Measuring Intrinsic Kinetics of Gas‐Phase and Gas‐Solid Reactions

“…The jets formed by the nozzles induce intense internal recycle streams, which are a prerequisite for uniform mixing. Several JSR designs are known and used intensively, including those developed at the Université de Lorraine (formerly Institut National Polytechnique de Lorraine) , the Institut de Combustion Aérothermique Réactivité et Environnement Orléans , Massachusetts Institute of Technology , the University of Leeds , the Institute for Energy Technology ETH Zürich , Eindhoven University of Technology , the Laboratory for Chemical Technology, Ghent University and the Institut für Technische Verbrennung (ITV), RWTH‐Aachen . In most cases JSRs were used to study gas‐phase oxidation and thermal decomposition kinetics.…”