The mathematical and computer modelling of microwave semiconductor devices

Cole, E. A. B.; Snowden, C.M.

doi:10.1016/s0895-7177(99)00213-7

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…These must be supplemented by the boundary conditions, which in this case will be Neumann conditions on the free surfaces and Dirichlet conditions on the contacts [12,13]. In addition, subsidiary equations must be used to specify the electron density n and the energy density W : Since quantum wells are formed at the interfaces of the AlGaAs, Equation (6) must be solved in one-dimensional sections in the y-direction perpendicular to the layer interfaces [14]. Here, E c E h À c is the conduction band minimum and E h is the band offset factor.…”

Section: Application Of the Phase Plane Methodsmentioning

confidence: 99%

The phase plane method for the solution of equations applied to semiconductor device modelling

Cole

2004

Int J Numerical Modelling

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SUMMARYA new method is introduced for solving the sets of discretized non-linear equations which arise in the modelling of semiconductor microwave devices. The technique involves writing the functions to be solved as the right-hand sides of damped differential equations. Following the solution path of these equations in phase space leads to the equilibrium point which corresponds to the solution of the original set of equations. An error analysis is made of the method, and the method is illustrated by applying it to a model of a four-layer HEMT with two recesses and a fieldplate. In the early stages of developing the modelling equations for a new device, it is necessary to be able to add or subtract features into the equations; the main benefit of the method introduced here is that the minimum amount of preparation needs to be done in order to discretize the amended equations.

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Section: Application Of the Phase Plane Methodsmentioning

confidence: 99%

The phase plane method for the solution of equations applied to semiconductor device modelling

Cole

2004

Int J Numerical Modelling

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“…Snowden and coworkers [10][11][12] have explicitly employed the 2D character of the electron gas by solving self-consistently the Poisson, continuity and Schrö dinger equations. In particular the Poisson and continuity equations were solved in 2D while Schrö dinger's equation was solved in 1D cuts perpendicular to the channel direction using the 2D DOS for the electron gas.…”

Section: Introductionmentioning

confidence: 99%

A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

Krokidis¹,

Xanthakis²,

Uzunoglu³

2008

Solid-State Electronics

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“…Τα αναλυτικά μοντέλα είναι χρήσιμα, γιατί παρέχουν μια πολύ γρήγορη εκτίμηση για τη συμπεριφορά της διάταξης. [112], [113].…”

Section: αναλυτικά μοντέλα για το ηεμτunclassified

Κβαντική Προσομοίωση (Στατική Και Δυναμική) Ημιαγώγιμων Ετεροεπαφών

Κροκίδης¹

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Η παρούσα διδακτορική διατριβή αποτελεί υποέργο του προγράμματος: «Ηράκλειτος: Υποτροφίες έρευνας με προτεραιότητα στην βασική έρευνα» Το Πρόγραμμα «ΗΡΑΚΛΕΙΤΟΣ» συγχρηματοδοτείται από το Ευρωπαϊκό Κοινοτικό Ταμείο (75%) και από Εθνικούς Πόρους (25%).

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The mathematical and computer modelling of microwave semiconductor devices

Cited by 6 publications

References 22 publications

The phase plane method for the solution of equations applied to semiconductor device modelling

The phase plane method for the solution of equations applied to semiconductor device modelling

A fully 2-dimensional, quantum mechanical calculation of short-channel and drain induced barrier lowering effects in HEMTs

Κβαντική Προσομοίωση (Στατική Και Δυναμική) Ημιαγώγιμων Ετεροεπαφών

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