The microstructure of and charge transfer in thin films based on metal-polymer nanocomposites

Zav’yalov, S. A.; Kupriyanov, L. Yu.; Пивкина, Алла Н.; Shounman, J.

doi:10.1134/s0036024406090184

Cited by 2 publications

(2 citation statements)

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“…The resistance decreases by 10 and 27 times with copper oxide introduction for type-1 and -2 gas sensors, respectively. The distribution of conductive particles in the film on the type-2 chip is more uniform, which contributes to hopping conductivity, but the percolation threshold is not reached and the percolation conduction mechanism does not work [55]. A slight change in resistance with increasing temperature in sensors based on pure silicon-carbon films indicates the structural disorder of the material and the absence of a significant effect of the metal sublayer.…”

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 99%

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 99%

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Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

et al. 2019

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In this study, we designed two types of gas-sensor chips with silicon–carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon–carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon–carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase.

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Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 99%

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 99%