The moss rule and the influence of doping on the optical dielectric constant of semiconductors—II

Finkenrath, H.

doi:10.1016/0020-0891(88)90061-9

Cited by 15 publications

(5 citation statements)

References 14 publications

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“…For bulk materials, pioneering works from the 1950s had demonstrated empirical equations between ε and the bandgap E g , including the Moss ,, or Ravindra , relations. Such universal relations, if they exist in the context of α 2D , would be of high importance for studying and predicting the screening of 2D materials.…”

Section: Resultsmentioning

confidence: 99%

Electronic Polarizability as the Fundamental Variable in the Dielectric Properties of Two-Dimensional Materials

et al. 2019

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The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties important for a plethora of modern technologies from computer memory to field effect transistors and communication circuits. Moreover, the importance of the dielectric constant in describing electromagnetic interactions through screening plays a critical role in understanding fundamental molecular interactions. Here we show that despite its fundamental transcendence, the dielectric constant does not define unequivocally the dielectric properties of two-dimensional (2D) materials due to the locality of their electrostatic screening. Instead, the electronic polarizability correctly captures the dielectric nature of a 2D material which is united to other physical quantities in an atomically thin layer. We reveal a long-sought universal formalism where electronic, geometrical and dielectric properties are intrinsically correlated through the polarizability opening the door to probe quantities yet not directly measurable including the real covalent thickness of a layer. We unify the concept of dielectric properties in any material dimension finding a global dielectric anisotropy index defining their controllability through dimensionality.

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Section: Resultsmentioning

confidence: 99%

Electronic Polarizability as the Fundamental Variable in the Dielectric Properties of Two-Dimensional Materials

et al. 2019

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“…model that in a dielectric medium with dielectric constant ε and refractive index n, all energy levels are scaled down by a factor ε 2 or n 4 , Moss proposed the well-known relation. The co-variation of refractive index (n) and optical bandgap (E g ) is a manifestation of this well-known Moss rule [13][14][15][16][17][18][19][20][21], which states that n 4 E g = constant.…”

Section: Introductionmentioning

confidence: 99%

“…A theoretical derivation of the Moss rule based on quasi-classical oscillator equations with consideration of the essential energy band parameters has been proposed by Finkenrath [1]. He later extended this approach based on a band model to derive a very highly useful semi-empirical interrelation [1,19].…”

Section: Introductionmentioning

confidence: 99%

Achieving superior band gap, refractive index and morphology in composite oxide thin film systems violating the Moss rule

Sahoo¹,

Thakur²,

Tokas³

2006

J. Phys. D: Appl. Phys.

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The interrelation between energy gap and high frequency refractive index in semiconductors and dielectrics is manifested by an inverse law which is popularly known as the Moss rule. This semi-empirical relationship is based on the fundamental principle that in a dielectric medium all energy levels are scaled down by a factor of the square of the dielectric constant. Such a rule is obeyed by most pure semiconductors and dielectrics with a few rare violations in composite materials which display several interesting parametric and microstructural evolutions. The present results are based on some specific oxide composite thin films involving Gd2O3/SiO2 and ZrO2/SiO2 codeposited systems that have displayed a superior refractive index and energy gaps violating the semi-empirical Moss rule. Also, morphological supremacy is also distinctly noticed in these composites. The novel microstructural and polarizability properties of such composite systems were probed through multi-mode atomic force microscopy and phase modulated spectroscopic ellipsometry using refractive index modelling, autocorrelation and height–height correlation functional analyses. These binary composite thin films have shown their potential as well as the possibility of meeting expectations in satisfying the challenging optical coating requirements of the deep ultraviolet spectral region.

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“…The shortcomings of this relation have been discussed in detail by Finkernath. [26] Herve et al [13] have used the oscillatory theory originally suggested by Penn [21] based on the random phase approximation for the dielectric function and proposed the following relation for the calculations of the refractive index,…”

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confidence: 99%

Refractive Index and Electronic Polarizability of Ternary Chalcopyrite Semiconductors

Kuḿar

Singh

Sinha

et al. 2015

Chinese Phys. Lett.

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Simple models are proposed for the calculation of refractive index 𝑛 and electronic polarizability 𝛼 of A I B III C VI 2 and A II B IV C V 2 groups of chalcopyrite semiconductors from their energy gap data. The values of 𝑛 and 𝛼 for 2 compounds of A I B III C VI 2 family and 12 compounds of A II B IV C V 2 family are calculated for the first time in this work. The proposed models are applicable for the whole range of energy gap materials. The calculated values are compared with the available experimental and reported values. A fairly good agreement between them is obtained.

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The moss rule and the influence of doping on the optical dielectric constant of semiconductors—II

Cited by 15 publications

References 14 publications

Electronic Polarizability as the Fundamental Variable in the Dielectric Properties of Two-Dimensional Materials

Electronic Polarizability as the Fundamental Variable in the Dielectric Properties of Two-Dimensional Materials

Achieving superior band gap, refractive index and morphology in composite oxide thin film systems violating the Moss rule

Refractive Index and Electronic Polarizability of Ternary Chalcopyrite Semiconductors

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